MTW32N20E

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Mfr.Part #
MTW32N20E
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 32A TO247
Stock
23,961
In Stock :
23,961

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
RoHS Status :
Non-RoHS Compliant
Reach Compliance Code :
not_compliant
Terminal Finish :
Tin/Lead (Sn/Pb)
Fall Time (Typ) :
91 ns
Lead Free :
Contains Lead
Number of Terminations :
3
Turn On Delay Time :
25 ns
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
200V
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Rise Time :
120ns
Mount :
Through Hole
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
235
Length :
15.9mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current Rating :
32A
Pulsed Drain Current-Max (IDM) :
128A
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Packaging :
Tube
JEDEC-95 Code :
TO-247AE
Published :
2000
FET Type :
N-Channel
Turn-Off Delay Time :
75 ns
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
75m Ω @ 16A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Through Hole
Power Dissipation-Max :
180W Tc
Pin Count :
3
Number of Pins :
3
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Height :
20.3mm
Voltage - Rated DC :
200V
Continuous Drain Current (ID) :
32A
Width :
5.3mm
JESD-609 Code :
e0
Drain-source On Resistance-Max :
0.075Ohm
Pbfree Code :
No
Input Capacitance (Ciss) (Max) @ Vds :
5000pF @ 25V
Avalanche Energy Rating (Eas) :
810 mJ
Additional Feature :
AVALANCHE RATED
Power Dissipation :
180W
ECCN Code :
EAR99
Datasheets
MTW32N20E
Introducing Transistors - FETs, MOSFETs - Single onsemi MTW32N20E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, MTW32N20E pinout, MTW32N20E datasheet PDF, MTW32N20E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTW32N20E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTW32N20E


N-Channel Tube 75m Ω @ 16A, 10V ±20V 5000pF @ 25V 120nC @ 10V TO-247-3

Description


The MTW32N20E is a Power MOSFET, 32 Amps, 200 Volts N?Channel TO?247. High energy can be withstood by this cutting-edge Power MOSFET in both avalanche and commutation modes. Another feature of the new energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.



Features


  • IDSS and VDS(on) Specified at Elevated Temperature

  • Isolated Mounting Hole

  • This is a Pb?Free Device*

  • Avalanche Energy Specified

  • Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

  • Diode is Characterized for Use in Bridge Circuits



Applications


  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications

  • Switch, buck and synchronous rectification

  • Uninterruptible Power Supplies (UPS)

  • Small motor control


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Shipping Cost

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