MTW32N20E
- Mfr.Part #
- MTW32N20E
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 32A TO247
- Stock
- 23,961
- In Stock :
- 23,961
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Fall Time (Typ) :
- 91 ns
- Lead Free :
- Contains Lead
- Number of Terminations :
- 3
- Turn On Delay Time :
- 25 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise Time :
- 120ns
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- 235
- Length :
- 15.9mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 32A
- Pulsed Drain Current-Max (IDM) :
- 128A
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-247AE
- Published :
- 2000
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 75 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 180W Tc
- Pin Count :
- 3
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Height :
- 20.3mm
- Voltage - Rated DC :
- 200V
- Continuous Drain Current (ID) :
- 32A
- Width :
- 5.3mm
- JESD-609 Code :
- e0
- Drain-source On Resistance-Max :
- 0.075Ohm
- Pbfree Code :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 180W
- ECCN Code :
- EAR99
- Datasheets
- MTW32N20E

N-Channel Tube 75m Ω @ 16A, 10V ±20V 5000pF @ 25V 120nC @ 10V TO-247-3
Description
The MTW32N20E is a Power MOSFET, 32 Amps, 200 Volts N?Channel TO?247. High energy can be withstood by this cutting-edge Power MOSFET in both avalanche and commutation modes. Another feature of the new energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.
Features
-
IDSS and VDS(on) Specified at Elevated Temperature
-
Isolated Mounting Hole
-
This is a Pb?Free Device*
-
Avalanche Energy Specified
-
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
-
Diode is Characterized for Use in Bridge Circuits
Applications
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MTW32N20EG | onsemi | 43,290 | MOSFET N-CH 200V 32A TO247 |
















