MTP50P03HDLG
- Mfr.Part #
- MTP50P03HDLG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 50A TO220AB
- Stock
- 55,058
- In Stock :
- 55,058
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -30V
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- Width :
- 4.826mm
- Resistance :
- 25mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 5V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 22 ns
- Power Dissipation-Max :
- 125W Tc
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Power Dissipation :
- 125W
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±15V
- Gate to Source Voltage (Vgs) :
- 15V
- Length :
- 10.2616mm
- Current Rating :
- -50A
- Fall Time (Typ) :
- 218 ns
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 25A, 5V
- Number of Terminations :
- 3
- Threshold Voltage :
- -1.5V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 90 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Published :
- 2004
- Continuous Drain Current (ID) :
- 50A
- Additional Feature :
- AVALANCHE RATED
- Height :
- 14.478mm
- Rise Time :
- 340ns
- Package / Case :
- TO-220-3
- Datasheets
- MTP50P03HDLG

P-Channel Tube 25m Ω @ 25A, 5V ±15V 4900pF @ 25V 100nC @ 5V TO-220-3
MTP50P03HDLG Description
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin
against unexpected voltage transients.
MTP50P03HDLG Features
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
These are Pb?Free Devices*
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