MTP50P03HDL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

125W

Mounting Type :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 5V

Forward Voltage :

2.39V

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Turn-Off Delay Time :

90 ns

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 5V

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

not_compliant

Number of Elements :

1

Pin Count :

3

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

240

Number of Terminations :

3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-30V

Published :

2006

Avalanche Energy Rating (Eas) :

1250 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

5V

Drain to Source Breakdown Voltage :

-30V

Rise Time :

340ns

Vgs (Max) :

±15V

Drain-source On Resistance-Max :

0.025Ohm

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

218 ns

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Number of Pins :

3

Terminal Finish :

Tin/Lead (Sn80Pb20)

Pbfree Code :

No

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

15V

Power Dissipation-Max :

125W Tc

Case Connection :

DRAIN

Element Configuration :

Single

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Current Rating :

-50A