MTP12P10G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Voltage - Rated DC :

-100V

Package / Case :

TO-220-3

Packaging :

Tube

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Rds On (Max) @ Id, Vgs :

300m Ω @ 6A, 10V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Current Rating :

-12A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pin Count :

3

Fall Time (Typ) :

150 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

12A

Case Connection :

DRAIN

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Turn-Off Delay Time :

150 ns

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Pulsed Drain Current-Max (IDM) :

28A

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Elements :

1

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

75W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Qualification Status :

Not Qualified

Element Configuration :

Single

Published :

2006

Pbfree Code :

yes

Rise Time :

150ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Power Dissipation-Max :

75W Tc

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE