MTP10N10ELG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.22Ohm

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Current Rating :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±15V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

15V

Rds On (Max) @ Id, Vgs :

220m Ω @ 5A, 5V

Published :

2010

Pbfree Code :

yes

Packaging :

Tube

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

50 mJ

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Voltage - Rated DC :

100V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rise Time :

74ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

38 ns

Pin Count :

3

Turn-Off Delay Time :

17 ns

Power Dissipation-Max :

1.75W Ta 40W Tc

Number of Terminations :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 22 hours ago)

Power Dissipation :

40W

Package / Case :

TO-220-3

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10A