MTM861280LBF
- Mfr.Part #
- MTM861280LBF
- Manufacturer
- Panasonic
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1A WSSMINI6-F1
- Stock
- 8,735
- In Stock :
- 8,735
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- P-Channel
- Power Dissipation :
- 540mW
- Published :
- 2009
- Length :
- 1.6mm
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Factory Lead Time :
- 10 Weeks
- Power Dissipation-Max :
- 540mW Ta
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 12 ns
- Height :
- 480μm
- Mount :
- Surface Mount
- Vgs (Max) :
- ±12V
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 1A
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 80pF @ 10V
- Gate to Source Voltage (Vgs) :
- 12V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- -1A
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- -1 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 6
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 500mA, 4V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 6-SMD, Flat Leads
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -20V
- Turn-Off Delay Time :
- 17 ns
- Datasheets
- MTM861280LBF

P-Channel Tape & Reel (TR) 420m Ω @ 500mA, 4V ±12V 80pF @ 10V 20V 6-SMD, Flat Leads
MTM861280LBF Overview
The maximum input capacitance of this device is 80pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4V), this device helps reduce its power consumption.
MTM861280LBF Features
a continuous drain current (ID) of -1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 17 ns
a 20V drain to source voltage (Vdss)
MTM861280LBF Applications
There are a lot of Panasonic Electronic Components
MTM861280LBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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