MTM861240LBF
- Mfr.Part #
- MTM861240LBF
- Manufacturer
- Panasonic
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A WSSMINI6-F1
- Stock
- 20,504
- In Stock :
- 20,504
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 400pF
- Width :
- 1.4mm
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 100MOhm
- Rds On Max :
- 130 mΩ
- Nominal Vgs :
- -850 mV
- Drain to Source Breakdown Voltage :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 1A, 4V
- Number of Pins :
- 6
- Published :
- 2008
- Factory Lead Time :
- 10 Weeks
- Turn-Off Delay Time :
- 100 ns
- Length :
- 1.6mm
- Turn On Delay Time :
- 15 ns
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 540mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- -2A
- Package / Case :
- 6-SMD, Flat Leads
- Vgs (Max) :
- ±10V
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation :
- 540mW
- Supplier Device Package :
- WSSMini6-F1
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 10V
- RoHS Status :
- RoHS Compliant
- Height :
- 480μm
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Gate to Source Voltage (Vgs) :
- 10V
- Datasheets
- MTM861240LBF

P-Channel Tape & Reel (TR) 130mOhm @ 1A, 4V ±10V 400pF @ 10V 20V 6-SMD, Flat Leads
MTM861240LBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 400pF @ 10V.This device has a continuous drain current (ID) of [-2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4V).
MTM861240LBF Features
a continuous drain current (ID) of -2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 100mOhm
a 20V drain to source voltage (Vdss)
MTM861240LBF Applications
There are a lot of Panasonic Electronic Components
MTM861240LBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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