MTD5P06VT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-60V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

5A

Number of Elements :

1

Threshold Voltage :

2.8V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Number of Terminations :

2

Power Dissipation :

40W

Drain Current-Max (Abs) (ID) :

5A

Rise Time :

26ns

Radiation Hardening :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Additional Feature :

AVALANCHE RATED

Resistance :

340mOhm

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Surface Mount :

yes

Element Configuration :

Single

Fall Time (Typ) :

19 ns

Length :

6.73mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

15V

Operating Mode :

ENHANCEMENT MODE

Height :

2.38mm

Power Dissipation-Max :

2.1W Ta 40W Tc

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Rds On (Max) @ Id, Vgs :

450m Ω @ 2.5A, 10V

FET Type :

P-Channel

Turn On Delay Time :

11 ns

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Published :

2006

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Vgs (Max) :

±15V

Number of Pins :

3

Drain to Source Breakdown Voltage :

-60V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Turn-Off Delay Time :

17 ns

Transistor Element Material :

SILICON

Current Rating :

-5A

Time@Peak Reflow Temperature-Max (s) :

40