MTD5P06VT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

15V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

26ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

19 ns

Vgs (Max) :

±15V

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2006

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.1W Ta 40W Tc

Drain to Source Breakdown Voltage :

-60V

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

240

Avalanche Energy Rating (Eas) :

125 mJ

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Number of Terminations :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

450m Ω @ 2.5A, 10V

Pin Count :

3

Continuous Drain Current (ID) :

5A

Drain-source On Resistance-Max :

0.45Ohm

Voltage - Rated DC :

-60V

Drain Current-Max (Abs) (ID) :

5A

FET Type :

P-Channel

Current Rating :

-5A

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

18A

Terminal Finish :

Tin/Lead (Sn80Pb20)

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Turn-Off Delay Time :

17 ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Element Configuration :

Single

Number of Pins :

3

Power Dissipation :

2.1W

Lifecycle Status :

OBSOLETE (Last Updated: 3 days ago)