MT49H64M9SJ-25E:B

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Mfr.Part #
MT49H64M9SJ-25E:B
Manufacturer
Micron Technology
Package / Case
144-TFBGA
Datasheet
Download
Description
IC DRAM 576MBIT PARALLEL 144FBGA
Stock
27,190
In Stock :
27,190

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Manufacturer :
Micron Technology
Product Category :
Memory
Packaging :
Tray
Length :
18.5mm
Data Bus Width :
9b
Memory Type :
Volatile
Contact Plating :
Copper, Silver, Tin
Operating Mode :
SYNCHRONOUS
Package / Case :
144-TFBGA
Access Time :
15ns
Number of Terminations :
144
Number of Functions :
1
Memory Size :
576Mb 64M x 9
Memory Format :
DRAM
Operating Supply Voltage :
1.8V
Supply Voltage-Min (Vsup) :
1.7V
Supply Voltage :
1.8V
Voltage - Supply :
1.7V~1.9V
Number of Ports :
1
Number of Pins :
144
Organization :
64MX9
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Supply Voltage-Max (Vsup) :
1.9V
Additional Feature :
AUTO REFRESH
Memory Width :
9
Memory Interface :
Parallel
Max Frequency :
400MHz
Terminal Position :
BOTTOM
Height Seated (Max) :
1.2mm
Factory Lead Time :
9 Weeks
RoHS Status :
ROHS3 Compliant
Density :
576 Mb
Terminal Pitch :
1mm
Published :
2015
Address Bus Width :
21b
Mount :
Surface Mount
Operating Temperature :
0°C~95°C TC
Datasheets
MT49H64M9SJ-25E:B
Introducing Memory Micron Technology MT49H64M9SJ-25E:B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:144-TFBGA, Number of Terminations:144, Number of Pins:144, Mounting Type:Surface Mount, Operating Temperature:0°C~95°C TC, MT49H64M9SJ-25E:B pinout, MT49H64M9SJ-25E:B datasheet PDF, MT49H64M9SJ-25E:B amp .Beyond Memory Micron Technology MT49H64M9SJ-25E:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT49H64M9SJ-25E:B


Memory Micron Technology MT49H64M9SJ-25E:B Overview

The Memory Micron Technology MT49H64M9SJ-25E:B DRAM module represents a sophisticated advancement in high-speed, high-capacity memory solutions designed for demanding applications. Manufactured by Micron Technology, a leader in integrated circuit technology, this memory module features a robust 576 Mbit density packed into a compact 144FBGA (Fine-Pitch Ball Grid Array) package. It is engineered to deliver unparalleled performance and reliability, making it an ideal choice for manufacturers looking to enhance their high-performance computing systems. The module's high data integrity and speed are perfect for applications requiring quick access to large amounts of data, ensuring efficient and reliable system operations.

MT49H64M9SJ-25E:B Features

The MT49H64M9SJ-25E:B DRAM module is designed for optimal efficiency and performance. Key features include its high-density 576 Mbit capacity, which allows substantial data storage within a small footprint. The 144FBGA packaging ensures robust physical protection and reliable connectivity, while its parallel interface facilitates high-speed data transfer rates. This combination of features makes it exceptionally well-suited for advanced computing tasks requiring fast and continuous access to memory.

MT49H64M9SJ-25E:B Applications

  • Advanced Computing Systems: Utilized in servers and high-performance computers, the MT49H64M9SJ-25E:B provides the necessary speed and capacity for complex computations and large-scale data processing.
  • Telecommunications Equipment: Supports the high data throughput and reliability required in telecom infrastructure, aiding in faster data transmission and enhanced network reliability.
  • Automotive Electronics: Employs robust, high-capacity memory critical for advanced driver-assistance systems (ADAS) and in-car entertainment systems.
  • Industrial Automation: Ideal for use in automation control systems, where quick data access and integrity are crucial for precise process control and operational efficiency.
  • Consumer Electronics: Applied in consumer electronics such as high-definition televisions and gaming consoles, ensuring quick response times and enhanced user experience.
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