MT49H64M9SJ-25E:B
- Mfr.Part #
- MT49H64M9SJ-25E:B
- Manufacturer
- Micron Technology
- Package / Case
- 144-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 576MBIT PARALLEL 144FBGA
- Stock
- 27,190
- In Stock :
- 27,190
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Packaging :
- Tray
- Length :
- 18.5mm
- Data Bus Width :
- 9b
- Memory Type :
- Volatile
- Contact Plating :
- Copper, Silver, Tin
- Operating Mode :
- SYNCHRONOUS
- Package / Case :
- 144-TFBGA
- Access Time :
- 15ns
- Number of Terminations :
- 144
- Number of Functions :
- 1
- Memory Size :
- 576Mb 64M x 9
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 1.8V
- Supply Voltage-Min (Vsup) :
- 1.7V
- Supply Voltage :
- 1.8V
- Voltage - Supply :
- 1.7V~1.9V
- Number of Ports :
- 1
- Number of Pins :
- 144
- Organization :
- 64MX9
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Max (Vsup) :
- 1.9V
- Additional Feature :
- AUTO REFRESH
- Memory Width :
- 9
- Memory Interface :
- Parallel
- Max Frequency :
- 400MHz
- Terminal Position :
- BOTTOM
- Height Seated (Max) :
- 1.2mm
- Factory Lead Time :
- 9 Weeks
- RoHS Status :
- ROHS3 Compliant
- Density :
- 576 Mb
- Terminal Pitch :
- 1mm
- Published :
- 2015
- Address Bus Width :
- 21b
- Mount :
- Surface Mount
- Operating Temperature :
- 0°C~95°C TC
- Datasheets
- MT49H64M9SJ-25E:B

Memory Micron Technology MT49H64M9SJ-25E:B Overview
The Memory Micron Technology MT49H64M9SJ-25E:B DRAM module represents a sophisticated advancement in high-speed, high-capacity memory solutions designed for demanding applications. Manufactured by Micron Technology, a leader in integrated circuit technology, this memory module features a robust 576 Mbit density packed into a compact 144FBGA (Fine-Pitch Ball Grid Array) package. It is engineered to deliver unparalleled performance and reliability, making it an ideal choice for manufacturers looking to enhance their high-performance computing systems. The module's high data integrity and speed are perfect for applications requiring quick access to large amounts of data, ensuring efficient and reliable system operations.
MT49H64M9SJ-25E:B Features
The MT49H64M9SJ-25E:B DRAM module is designed for optimal efficiency and performance. Key features include its high-density 576 Mbit capacity, which allows substantial data storage within a small footprint. The 144FBGA packaging ensures robust physical protection and reliable connectivity, while its parallel interface facilitates high-speed data transfer rates. This combination of features makes it exceptionally well-suited for advanced computing tasks requiring fast and continuous access to memory.
MT49H64M9SJ-25E:B Applications
- Advanced Computing Systems: Utilized in servers and high-performance computers, the MT49H64M9SJ-25E:B provides the necessary speed and capacity for complex computations and large-scale data processing.
- Telecommunications Equipment: Supports the high data throughput and reliability required in telecom infrastructure, aiding in faster data transmission and enhanced network reliability.
- Automotive Electronics: Employs robust, high-capacity memory critical for advanced driver-assistance systems (ADAS) and in-car entertainment systems.
- Industrial Automation: Ideal for use in automation control systems, where quick data access and integrity are crucial for precise process control and operational efficiency.
- Consumer Electronics: Applied in consumer electronics such as high-definition televisions and gaming consoles, ensuring quick response times and enhanced user experience.
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