MT49H64M9FM-25:B

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Interface :

Parallel

Additional Feature :

AUTO REFRESH

Height Seated (Max) :

1.2mm

Supply Voltage-Min (Vsup) :

1.7V

Memory Type :

Volatile

Memory Format :

DRAM

Power Supplies :

1.5/1.81.82.5V

Terminal Finish :

Tin/Lead/Silver (Sn/Pb/Ag)

HTS Code :

8542.32.00.32

Supply Voltage :

1.8V

JESD-609 Code :

e0

Radiation Hardening :

No

Data Bus Width :

9b

Number of Functions :

1

Supply Current-Max :

0.655mA

Terminal Pitch :

1mm

Operating Supply Voltage :

1.8V

Max Frequency :

400MHz

Surface Mount :

yes

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

1.9V

Packaging :

Tray

Memory Size :

576Mb 64M x 9

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Access Time :

20ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

I/O Type :

COMMON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Density :

576 Mb

Number of Ports :

1

Package / Case :

144-TFBGA

Memory Width :

9

Standby Current-Max :

0.055A

Sequential Burst Length :

248

Organization :

64MX9

Number of Terminations :

144

Length :

18.5mm

Voltage - Supply :

1.7V~1.9V

Published :

2015

Number of Pins :

144

Pin Count :

144

Operating Temperature :

0°C~95°C TC

Address Bus Width :

25b