MT49H32M18CSJ-25E:B

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Mfr.Part #
MT49H32M18CSJ-25E:B
Manufacturer
Micron Technology
Package / Case
144-TFBGA
Datasheet
Download
Description
IC DRAM 576MBIT PARALLEL 144FBGA
Stock
15,178
In Stock :
15,178

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Manufacturer :
Micron Technology
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Mounting Type :
Surface Mount
Package / Case :
144-TFBGA
Memory Interface :
Parallel
Organization :
32MX18
Factory Lead Time :
9 Weeks
Operating Temperature :
0°C~95°C TC
Surface Mount :
yes
Terminal Position :
BOTTOM
Number of Terminations :
144
Supply Voltage-Max (Vsup) :
1.9V
Memory Size :
576Mb 32M x 18
Packaging :
Tray
Number of Ports :
1
Access Time :
15ns
Additional Feature :
AUTO REFRESH
Memory Format :
DRAM
Terminal Pitch :
1mm
Voltage - Supply :
1.7V~1.9V
Density :
576 Mb
Max Frequency :
400MHz
Operating Mode :
SYNCHRONOUS
Address Bus Width :
20b
Number of Functions :
1
Operating Supply Voltage :
1.8V
RoHS Status :
ROHS3 Compliant
Height Seated (Max) :
1.2mm
Length :
18.5mm
Supply Voltage-Min (Vsup) :
1.7V
Memory Type :
Volatile
Number of Pins :
144
Memory Width :
18
Supply Voltage :
1.8V
Introducing Memory Micron Technology MT49H32M18CSJ-25E:B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:144-TFBGA, Operating Temperature:0°C~95°C TC, Number of Terminations:144, Number of Pins:144, MT49H32M18CSJ-25E:B pinout, MT49H32M18CSJ-25E:B datasheet PDF, MT49H32M18CSJ-25E:B amp .Beyond Memory Micron Technology MT49H32M18CSJ-25E:B ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT49H32M18CSJ-25E:B


Memory Micron Technology MT49H32M18CSJ-25E:B Overview

The Memory Micron Technology MT49H32M18CSJ-25E:B is an advanced memory solution designed by Micron Technology, featuring robust capabilities suitable for high-demand applications. This integrated circuit provides a substantial 576Mbit DRAM in a compact 144FBGA package, optimized for both space efficiency and high-speed performance. Designed to address the growing needs for larger, more reliable memory storage across various industries, this product stands out with its parallel interface, enhancing data transfer rates and system reliability.

MT49H32M18CSJ-25E:B Features

This DRAM IC excels in delivering high-capacity memory storage with a configuration that supports rapid access speeds. Key features include a 576Mbit data capacity, a parallel interface for enhanced data throughput, and a compact 144-pin fine ball grid array (FBGA) package that ensures minimized space utilization while maintaining performance integrity.

MT49H32M18CSJ-25E:B Applications

  • Telecommunications Equipment: Utilized in routers and switches, this DRAM can manage multiple data streams efficiently, improving bandwidth and system responsiveness.
  • Computing: Ideal for use in high-performance computing applications where speed and data integrity are crucial, such as servers and high-end PCs.
  • Automotive Systems: Supports advanced driver-assistance systems (ADAS) by providing the necessary speed and capacity for real-time data processing.
  • Consumer Electronics: Enhances the performance of consumer electronics, such as smart TVs and gaming consoles, by offering reliable and swift data access.
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