MT47R256M4CF-3:H

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Pitch :

0.8mm

Qualification Status :

Not Qualified

Memory Format :

DRAM

Base Part Number :

MT47R256M4

Output Characteristics :

3-STATE

Pin Count :

60

Terminal Finish :

TIN SILVER COPPER

Write Cycle Time - Word, Page :

15ns

Peak Reflow Temperature (Cel) :

260

Interleaved Burst Length :

48

Operating Temperature :

0°C~85°C TC

Voltage - Supply :

1.55V~1.9V

JESD-30 Code :

R-PBGA-B60

Length :

10mm

Access Time :

450ps

Additional Feature :

SELF CONTAINED REFRESH

Width :

8mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Memory Size :

1Gb 256M x 4

Terminal Position :

BOTTOM

I/O Type :

COMMON

Refresh Cycles :

8192

Number of Ports :

1

JESD-609 Code :

e1

Supply Voltage :

1.55V

Operating Supply Voltage :

1.55V

Memory Interface :

Parallel

Surface Mount :

yes

Clock Frequency :

333MHz

Number of Functions :

1

Operating Mode :

SYNCHRONOUS

Pbfree Code :

yes

Memory Width :

4

Memory Type :

Volatile

Packaging :

Tray

Package / Case :

60-TFBGA

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Memory Density :

1073741824 bit

Height Seated (Max) :

1.2mm

Supply Voltage-Max (Vsup) :

1.9V

Number of Terminations :

60

Organization :

256MX4

Supply Voltage-Min (Vsup) :

1.5V

ECCN Code :

EAR99

Sequential Burst Length :

48

HTS Code :

8542.32.00.32

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

30