MT47H128M16RT-25E AAT:C

Manufacturer :

Micron Technology

Product Category :

Memory

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Voltage - Supply :

1.7V~1.9V

Memory Type :

Volatile

JESD-30 Code :

R-PBGA-B84

Memory Size :

2Gb 128M x 16

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

1.7V

ECCN Code :

EAR99

Packaging :

Tray

Base Part Number :

MT47H128M16

Refresh Cycles :

8192

RoHS Status :

ROHS3 Compliant

Published :

2014

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

15ns

Terminal Position :

BOTTOM

Memory Format :

DRAM

Surface Mount :

yes

Terminal Pitch :

0.8mm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

SYNCHRONOUS

Memory Density :

2147483648 bit

Standby Current-Max :

0.012A

Additional Feature :

AUTO/SELF REFRESH

Number of Functions :

1

Package / Case :

84-TFBGA

Memory Width :

16

Supply Voltage :

1.8V

Output Characteristics :

3-STATE

Operating Temperature :

-40°C~105°C TC

Height Seated (Max) :

1.2mm

Organization :

128MX16

Number of Terminations :

84

Mounting Type :

Surface Mount

Length :

12.5mm

Power Supplies :

1.8V

Pin Count :

84

Access Time :

400ps

Width :

9mm

I/O Type :

COMMON

Clock Frequency :

400MHz

Supply Voltage-Max (Vsup) :

1.9V

Number of Ports :

1

Screening Level :

AEC-Q100

Pbfree Code :

yes

HTS Code :

8542.32.00.36

Interleaved Burst Length :

48

Terminal Finish :

TIN SILVER COPPER

Memory Interface :

Parallel

Sequential Burst Length :

48

Supply Current-Max :

0.33mA