MT47H128M16RT-25E:C
- Mfr.Part #
- MT47H128M16RT-25E:C
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 2GBIT PARALLEL 84FBGA
- Stock
- 4,950
- In Stock :
- 4,950
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Interleaved Burst Length :
- 48
- Access Time :
- 400ps
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Refresh Cycles :
- 8192
- Factory Lead Time :
- 4 Weeks
- Clock Frequency :
- 400MHz
- Lead Free :
- Lead Free
- Number of Ports :
- 1
- Memory Width :
- 16
- Packaging :
- Tray
- Operating Temperature :
- 0°C~85°C TC
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Package / Case :
- 84-TFBGA
- HTS Code :
- 8542.32.00.36
- Supply Voltage-Min (Vsup) :
- 1.7V
- Pbfree Code :
- yes
- Base Part Number :
- MT47H128M16
- Mounting Type :
- Surface Mount
- Contact Plating :
- Copper, Silver, Tin
- Organization :
- 128MX16
- Sequential Burst Length :
- 48
- Write Cycle Time - Word, Page :
- 15ns
- Published :
- 2011
- Terminal Finish :
- Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Voltage - Supply :
- 1.7V~1.9V
- Height :
- 1.45mm
- Number of Terminations :
- 84
- Density :
- 2 GB
- Supply Voltage-Max (Vsup) :
- 1.9V
- Pin Count :
- 84
- Supply Voltage :
- 1.8V
- RoHS Status :
- ROHS3 Compliant
- Address Bus Width :
- 17b
- I/O Type :
- COMMON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Supply Voltage :
- 1.8V
- Memory Size :
- 2Gb 128M x 16
- Number of Functions :
- 1
- Output Characteristics :
- 3-STATE
- Radiation Hardening :
- No
- Length :
- 12.5mm
- JESD-609 Code :
- e1
- Additional Feature :
- AUTO/SELF REFRESH
- ECCN Code :
- EAR99
- Nominal Supply Current :
- 190mA
- Ambient Temperature Range High :
- 85°C
- Memory Format :
- DRAM
- Data Bus Width :
- 16b
- Standby Current-Max :
- 0.012A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Pitch :
- 0.8mm
- Number of Pins :
- 84
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MT47H128M16RT-25E:C

Memory Micron Technology MT47H128M16RT-25E:C Overview
The Memory Micron Technology MT47H128M16RT-25E:C is a high-performance 2Gbit DRAM integrated circuit designed by Micron Technology, encapsulated in an 84FBGA package. This memory module provides robust parallel processing capabilities, making it an ideal solution for applications requiring high-speed data transfer and significant storage capacity. Its advanced design ensures reliability and high-level performance, meeting the rigorous demands of modern technology systems.
MT47H128M16RT-25E:C Features
The MT47H128M16RT-25E:C boasts a range of features that enhance its efficiency and suitability for complex applications. These include a large 2Gbit storage capacity, high data transfer speeds, and low latency. The module's compact 84FBGA packaging allows for efficient space utilization on printed circuit boards, facilitating better heat dissipation and improved signal integrity. Furthermore, it is designed for low-power consumption, which makes it an environmentally friendly choice.
MT47H128M16RT-25E:C Applications
- Computing Systems: Utilized in desktops, laptops, and servers where large amounts of data processing and temporary data storage are required for efficient operation.
- Consumer Electronics: Implemented in devices such as digital cameras and gaming consoles to enhance performance by providing rapid access to data.
- Telecommunication Equipment: Applied in networking hardware like routers and switches, supporting the high-speed data exchange and buffering required in telecommunication infrastructures.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) and infotainment systems, where quick data processing is critical for safety and user experience.
- Industrial Applications: Integral in automation systems and industrial PCs that require robust memory solutions for complex processing and control tasks.
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