MT47R128M8CF-3:H
- Mfr.Part #
- MT47R128M8CF-3:H
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 60FBGA
- Stock
- 36,129
- In Stock :
- 36,129
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Size :
- 1Gb 128M x 8
- Clock Frequency :
- 333MHz
- Memory Format :
- DRAM
- Nominal Supply Current :
- 115mA
- Peak Reflow Temperature (Cel) :
- 260
- Write Cycle Time - Word, Page :
- 15ns
- Supply Voltage-Max (Vsup) :
- 1.9V
- Height Seated (Max) :
- 1.2mm
- Lead Free :
- Lead Free
- Supply Voltage-Min (Vsup) :
- 1.5V
- Mount :
- Surface Mount
- Operating Temperature :
- 0°C~85°C TC
- Max Frequency :
- 667MHz
- Mounting Type :
- Surface Mount
- Memory Width :
- 8
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Published :
- 2010
- Number of Terminations :
- 60
- Package / Case :
- 60-TFBGA
- Supply Voltage :
- 1.55V
- Operating Mode :
- SYNCHRONOUS
- Additional Feature :
- SELF CONTAINED REFRESH
- Terminal Pitch :
- 0.8mm
- Qualification Status :
- Not Qualified
- Voltage - Supply :
- 1.55V~1.9V
- Interleaved Burst Length :
- 48
- Packaging :
- Tray
- Refresh Cycles :
- 8192
- Operating Supply Voltage :
- 1.55V
- Number of Pins :
- 60
- RoHS Status :
- ROHS3 Compliant
- Memory Interface :
- Parallel
- JESD-609 Code :
- e1
- Address Bus Width :
- 17b
- Output Characteristics :
- 3-STATE
- Length :
- 10mm
- Pbfree Code :
- yes
- I/O Type :
- COMMON
- Organization :
- 128MX8
- HTS Code :
- 8542.32.00.32
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Ports :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Functions :
- 1
- Base Part Number :
- MT47R128M8
- Sequential Burst Length :
- 48
- Memory Type :
- Volatile
- Density :
- 1 Gb
- Access Time :
- 450ps
- Pin Count :
- 60
- Datasheets
- MT47R128M8CF-3:H

Memory Micron Technology MT47R128M8CF-3:H Overview
The MT47R128M8CF-3:H from Micron Technology exemplifies cutting-edge advancements in integrated circuit technology, specifically within the Memory category. This high-capacity IC DRAM boasts a 1Gbit density, meticulously engineered for high-performance applications requiring robust, reliable memory solutions. Its integration into a compact 60FBGA package allows for efficient space utilization in dense electronic environments, making it an ideal choice for manufacturers aiming to develop products with minimized form factors without compromising on memory capacity. This product's exceptional throughput and durability make it particularly appealing for B2B clients focused on bulk purchases to power next-generation devices.
MT47R128M8CF-3:H Features
The MT47R128M8CF-3:H DRAM is tailored to meet the high standards of contemporary electronics with features that include a parallel interface for swift data transfer, a substantial 1Gbit storage capacity, and low latency performance. It is packaged in a highly efficient 60FBGA layout that ensures thermal stability and reduced power consumption, key attributes for sustaining prolonged operational life and reliability in demanding applications.
MT47R128M8CF-3:H Applications
- Advanced Computing Systems: Utilized in servers and high-performance computing platforms, the MT47R128M8CF-3:H provides the necessary memory bandwidth and capacity to handle extensive data processing tasks efficiently.
- Consumer Electronics: This DRAM can be embedded in consumer electronics such as high-definition televisions and gaming consoles, offering enhanced graphics and smoother performance due to its high-speed data retrieval capabilities.
- Telecommunications Infrastructure: Essential for the backbone of modern telecommunications systems, this IC supports the rapid processing and storage demands of network equipment like routers and switches.
- Automotive Electronics: In automotive applications, the MT47R128M8CF-3:H supports advanced driver-assistance systems (ADAS) and infotainment systems, requiring robust memory solutions to ensure reliability and responsiveness.
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