MT47H64M8CF-25E L:G
- Mfr.Part #
- MT47H64M8CF-25E L:G
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 3,905
- In Stock :
- 3,905
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Pin Count :
- 60
- Operating Mode :
- SYNCHRONOUS
- Length :
- 10mm
- Supply Voltage :
- 1.8V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Write Cycle Time - Word, Page :
- 15ns
- Operating Temperature :
- 0°C~85°C TC
- Sequential Burst Length :
- 48
- Standby Current-Max :
- 0.007A
- Number of Terminations :
- 60
- Output Characteristics :
- 3-STATE
- Additional Feature :
- AUTO/SELF REFRESH
- Package / Case :
- 60-TFBGA
- Memory Size :
- 512Mb 64M x 8
- Memory Density :
- 536870912 bit
- Memory Format :
- DRAM
- Voltage - Supply :
- 1.7V~1.9V
- HTS Code :
- 8542.32.00.28
- RoHS Status :
- ROHS3 Compliant
- I/O Type :
- COMMON
- Number of Functions :
- 1
- Published :
- 2010
- Supply Current-Max :
- 0.215mA
- Access Time :
- 400ps
- JESD-30 Code :
- R-PBGA-B60
- Clock Frequency :
- 400MHz
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Memory Width :
- 8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- MT47H64M8
- Interleaved Burst Length :
- 48
- Memory Interface :
- Parallel
- Width :
- 8mm
- Memory Type :
- Volatile
- Qualification Status :
- Not Qualified
- Terminal Pitch :
- 0.8mm
- Packaging :
- Tray
- Refresh Cycles :
- 8192
- Organization :
- 64MX8
- Supply Voltage-Min (Vsup) :
- 1.7V
- Height Seated (Max) :
- 1.2mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Max (Vsup) :
- 1.9V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Power Supplies :
- 1.8V
- Datasheets
- MT47H64M8CF-25E L:G

Memory Micron Technology MT47H64M8CF-25E L:G Overview
The Memory Micron Technology MT47H64M8CF-25E L:G is a high-performance IC DRAM designed to meet the demanding needs of advanced computing systems. This 512Mbit DRAM offers robust parallel processing capabilities in a compact 60FBGA package, ensuring efficient space utilization and improved thermal management. Ideal for applications requiring high-speed data retrieval and storage, this product stands out in the marketplace for its reliability and Micron Technology's commitment to quality. By integrating this memory component, businesses can significantly boost the performance of their systems, leading to enhanced overall productivity and efficiency.
MT47H64M8CF-25E L:G Features
- 512Mbit density for substantial data handling.
- Parallel interface ensures high-speed data access and processing.
- Compact 60FBGA packaging allows for efficient space usage and better system design flexibility.
- Manufactured by Micron Technology, a leader in integrated circuit technology.
MT47H64M8CF-25E L:G Applications
- Advanced Computing Systems: Utilized in servers and high-end computing devices for faster data processing and larger memory capacity.
- Networking Hardware: Enhances performance in routers and switches with rapid data throughput and improved buffer management.
- Consumer Electronics: Integral in providing the memory required for high-performance gaming consoles and home entertainment systems.
- Automotive Systems: Supports advanced driver-assistance systems (ADAS) with quick data retrieval necessary for real-time decision making.
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