MT47H64M8CF-25E IT:G
- Mfr.Part #
- MT47H64M8CF-25E IT:G
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 42,614
- In Stock :
- 42,614
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Operating Temperature :
- -40°C~95°C TC
- JESD-609 Code :
- e1
- Surface Mount :
- yes
- I/O Type :
- COMMON
- HTS Code :
- 8542.32.00.28
- Access Time :
- 400ps
- Memory Size :
- 512Mb 64M x 8
- JESD-30 Code :
- R-PBGA-B60
- Clock Frequency :
- 400MHz
- Organization :
- 64MX8
- Supply Current-Max :
- 0.215mA
- Memory Format :
- DRAM
- Supply Voltage-Max (Vsup) :
- 1.9V
- Package / Case :
- 60-TFBGA
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 1.7V~1.9V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Functions :
- 1
- RoHS Status :
- ROHS3 Compliant
- Memory Interface :
- Parallel
- Additional Feature :
- AUTO/SELF REFRESH
- Output Characteristics :
- 3-STATE
- Height Seated (Max) :
- 1.2mm
- Width :
- 8mm
- Standby Current-Max :
- 0.007A
- Operating Mode :
- SYNCHRONOUS
- Number of Terminations :
- 60
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Length :
- 10mm
- Packaging :
- Tray
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Write Cycle Time - Word, Page :
- 15ns
- Number of Ports :
- 1
- Terminal Position :
- BOTTOM
- Interleaved Burst Length :
- 48
- Supply Voltage :
- 1.8V
- Sequential Burst Length :
- 48
- Power Supplies :
- 1.8V
- Terminal Pitch :
- 0.8mm
- Refresh Cycles :
- 8192
- Memory Density :
- 536870912 bit
- Pin Count :
- 60
- Memory Type :
- Volatile
- Base Part Number :
- MT47H64M8
- Memory Width :
- 8
- Published :
- 2010
- Supply Voltage-Min (Vsup) :
- 1.7V
- Datasheets
- MT47H64M8CF-25E IT:G

Memory Micron Technology MT47H64M8CF-25E IT:G Overview
The Memory Micron Technology MT47H64M8CF-25E IT:G is a high-performance DRAM chip that offers robust data storage and retrieval capabilities tailored for advanced electronic applications. Manufactured by Micron Technology, this 512Mbit DRAM utilizes a parallel interface encapsulated in a compact 60FBGA package. Its ability to deliver high-speed data transfer and low-latency performance makes it an ideal solution for enhancing the efficiency and responsiveness of sophisticated electronic systems.
MT47H64M8CF-25E IT:G Features
This DRAM chip excels in delivering multiple features essential for demanding applications, including a high data bandwidth and a reduced power consumption footprint. Its compact 60FBGA package ensures a minimalistic design footprint while providing substantial data storage capacity, making it a versatile choice for compact yet powerful electronic assemblies.
MT47H64M8CF-25E IT:G Applications
- Computing Systems: Employed in both personal and professional computing devices, the MT47H64M8CF-25E IT:G enhances system memory, thereby enabling faster processing speeds and improved multitasking capabilities.
- Mobile Devices: Integral to mobile phones and tablets where space is limited but demand for efficient, high-speed memory is high, aiding in smooth user experiences and efficient app handling.
- Networking Equipment: Used in routers and switches, this DRAM helps manage data flow efficiently, ensuring high performance in networking tasks and connectivity.
- Consumer Electronics: Supports functionalities in devices such as smart TVs and gaming consoles, where enhanced memory capacity contributes to better performance and richer multimedia experiences.
- Automotive Systems: Applied in automotive electronics, the DRAM supports advanced navigation and infotainment systems, helping to handle large amounts of data effectively and improve user interaction.
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