MT47H64M8CF-25E:G

Manufacturer :

Micron Technology

Product Category :

Memory

Mounting Type :

Surface Mount

Address Bus Width :

16b

JESD-609 Code :

e1

Number of Functions :

1

Access Time :

400ps

I/O Type :

COMMON

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

1.7V

ECCN Code :

EAR99

Pin Count :

60

Output Characteristics :

3-STATE

Height Seated (Max) :

1.2mm

Standby Current-Max :

0.007A

Number of Pins :

60

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Published :

2010

Lead Free :

Lead Free

Memory Size :

512Mb 64M x 8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Pbfree Code :

yes

Operating Supply Voltage :

1.8V

Max Frequency :

800MHz

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage :

1.8V

Write Cycle Time - Word, Page :

15ns

Sequential Burst Length :

48

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Operating Temperature :

0°C~85°C TC

HTS Code :

8542.32.00.28

Organization :

64MX8

Voltage - Supply :

1.7V~1.9V

Base Part Number :

MT47H64M8

Mount :

Surface Mount

Supply Voltage-Max (Vsup) :

1.9V

Terminal Position :

BOTTOM

Refresh Cycles :

8192

Clock Frequency :

400MHz

Memory Type :

Volatile

Package / Case :

60-TFBGA

Memory Width :

8

Data Bus Width :

8B

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Nominal Supply Current :

125mA

Length :

10mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Ports :

1

Interleaved Burst Length :

48

Density :

512 Mb

Number of Terminations :

60

Peak Reflow Temperature (Cel) :

260