MT47H64M8CB-5E IT:B

Manufacturer :

Micron Technology

Product Category :

Memory

Operating Mode :

SYNCHRONOUS

Height Seated (Max) :

1.2mm

Number of Terminations :

60

Sequential Burst Length :

48

Voltage - Supply :

1.7V~1.9V

Supply Voltage :

1.8V

Reach Compliance Code :

not_compliant

HTS Code :

8542.32.00.28

Number of Functions :

1

Supply Current-Max :

0.22mA

Width :

10mm

JESD-30 Code :

R-PBGA-B60

Base Part Number :

MT47H64M8

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage-Max (Vsup) :

1.9V

Memory Size :

512Mb 64M x 8

Memory Width :

8

Output Characteristics :

3-STATE

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Terminal Pitch :

0.8mm

Length :

12mm

Standby Current-Max :

0.007A

Access Time :

600ps

Published :

2006

Clock Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

30

Interleaved Burst Length :

48

Package / Case :

60-FBGA

Memory Format :

DRAM

Operating Temperature :

-40°C~95°C TC

Refresh Cycles :

8192

Packaging :

Tray

ECCN Code :

EAR99

Surface Mount :

yes

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Pin Count :

60

Additional Feature :

AUTO/SELF REFRESH

RoHS Status :

ROHS3 Compliant

I/O Type :

COMMON

Memory Density :

536870912 bit

JESD-609 Code :

e1

Power Supplies :

1.8V

Memory Interface :

Parallel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Write Cycle Time - Word, Page :

15ns

Organization :

64MX8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile