MT47H64M8CB-5E:B
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- Mfr.Part #
- MT47H64M8CB-5E:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 40,248
- In Stock ：
- 40,248
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Size :
- 512Mb 64M x 8
- Supply Voltage-Min (Vsup) :
- 1.7V
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Supply Voltage :
- 1.8V
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.007A
- Operating Temperature :
- 0°C~85°C TC
- Output Characteristics :
- 3-STATE
- Operating Supply Voltage :
- 1.8V
- Sequential Burst Length :
- 48
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 1.7V~1.9V
- Nominal Supply Current :
- 115mA
- Mounting Type :
- Surface Mount
- Memory Type :
- Volatile
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Memory Format :
- DRAM
- Pin Count :
- 60
- Terminal Position :
- BOTTOM
- Number of Pins :
- 60
- Additional Feature :
- AUTO/SELF REFRESH
- Reach Compliance Code :
- Unknown
- Write Cycle Time - Word, Page :
- 15ns
- Qualification Status :
- Not Qualified
- Supply Voltage-Max (Vsup) :
- 1.9V
- Clock Frequency :
- 200MHz
- Refresh Cycles :
- 8192
- Number of Terminations :
- 60
- Operating Mode :
- SYNCHRONOUS
- Number of Functions :
- 1
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 8
- Package / Case :
- 60-FBGA
- Density :
- 512 Mb
- Packaging :
- Tray
- Organization :
- 64MX8
- ECCN Code :
- EAR99
- Number of Ports :
- 1
- Access Time :
- 600ps
- Published :
- 2006
- Address Bus Width :
- 16b
- Base Part Number :
- MT47H64M8
- Terminal Pitch :
- 0.8mm
- HTS Code :
- 8542.32.00.28
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- I/O Type :
- COMMON
- Length :
- 12mm
- Interleaved Burst Length :
- 48
- JESD-609 Code :
- e1
- Datasheets
- MT47H64M8CB-5E:B
Memory Micron Technology MT47H64M8CB-5E:B Overview
The Memory Micron Technology MT47H64M8CB-5E:B DRAM is a cutting-edge memory solution crafted by Micron Technology, specifically designed to meet the rigorous demands of high-performance computing environments. With a substantial storage capacity of 512Mbit and a robust parallel interface, this product ensures rapid data access and processing capabilities, making it an indispensable component in modern electronics. Its compact 60FBGA packaging not only maximizes space efficiency but also aids in enhanced thermal management, thereby ensuring reliable performance under varying operational conditions. Ideal for applications requiring high-speed data manipulation and storage, this DRAM module is engineered to deliver unmatched reliability and performance.
MT47H64M8CB-5E:B Features
This DRAM module boasts several key features that make it a preferred choice for sophisticated electronic systems:
- 512Mbit Density: Provides ample space for data-intensive applications.
- Parallel Interface: Ensures fast and efficient data transfer rates.
- 60FBGA Package: Offers a compact footprint and superior thermal properties.
- High Data Bandwidth: Facilitates enhanced processing speeds suitable for advanced computing tasks.
MT47H64M8CB-5E:B Applications
- Consumer Electronics: Utilized in devices such as smartphones and tablets to manage multiple applications simultaneously without compromising performance.
- Computing: Integral for PCs and servers where high-speed data processing and large memory bandwidth are necessary for efficient operations.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to quickly process and store information critical for vehicle safety.
- Networking: Essential in routers and switches to handle large volumes of data traffic, ensuring smooth and reliable network connectivity.
- Industrial Applications: Used in machinery and control systems that require robust data management capabilities to ensure operational accuracy and reliability.
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