MT47H64M8CB-3:B
- Mfr.Part #
- MT47H64M8CB-3:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 44,985
- In Stock :
- 44,985
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Width :
- 8
- Qualification Status :
- Not Qualified
- Refresh Cycles :
- 8192
- Nominal Supply Current :
- 180mA
- Peak Reflow Temperature (Cel) :
- 260
- Standby Current-Max :
- 0.007A
- Terminal Finish :
- TIN SILVER COPPER
- HTS Code :
- 8542.32.00.28
- Access Time :
- 450ps
- Memory Interface :
- Parallel
- Height Seated (Max) :
- 1.2mm
- Terminal Pitch :
- 0.8mm
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- SYNCHRONOUS
- Package / Case :
- 60-FBGA
- Supply Voltage-Max (Vsup) :
- 1.9V
- Supply Voltage :
- 1.8V
- Address Bus Width :
- 16b
- Pin Count :
- 60
- Output Characteristics :
- 3-STATE
- Terminal Position :
- BOTTOM
- Published :
- 2006
- Interleaved Burst Length :
- 48
- Clock Frequency :
- 333MHz
- Memory Format :
- DRAM
- Mounting Type :
- Surface Mount
- Memory Type :
- Volatile
- Write Cycle Time - Word, Page :
- 15ns
- Number of Functions :
- 1
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Size :
- 512Mb 64M x 8
- Number of Terminations :
- 60
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- 0°C~85°C TC
- Number of Pins :
- 60
- Organization :
- 64MX8
- ECCN Code :
- EAR99
- Length :
- 12mm
- Number of Ports :
- 1
- I/O Type :
- COMMON
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- JESD-609 Code :
- e1
- Sequential Burst Length :
- 48
- Lead Free :
- Lead Free
- Base Part Number :
- MT47H64M8
- Additional Feature :
- AUTO/SELF REFRESH
- Density :
- 512 Mb
- Supply Voltage-Min (Vsup) :
- 1.7V
- Operating Supply Voltage :
- 1.8V
- Mount :
- Surface Mount
- Voltage - Supply :
- 1.7V~1.9V
- Datasheets
- MT47H64M8CB-3:B

Memory Micron Technology MT47H64M8CB-3:B Overview
The Memory Micron Technology MT47H64M8CB-3:B IC DRAM is a high-performance 512Mbit DRAM chip housed in a compact 60FBGA package, specifically designed to meet the demanding requirements of advanced computing systems. Offering a blend of speed and reliability, this memory chip is engineered by Micron Technology, a leader in memory and storage solutions. It ensures efficient data throughput and enhanced memory bandwidth, making it an ideal choice for applications requiring high-speed data processing and significant storage capacity.
MT47H64M8CB-3:B Features
This dynamic RAM component features a robust parallel interface, facilitating rapid data transfer rates and supporting the intensive bandwidth requirements of modern applications. With a configuration of 64 Meg x 8 bits, it provides ample space and speed for complex processing tasks. The 60FBGA packaging not only minimizes the physical footprint but also enhances the thermal management and electrical integrity, crucial for maintaining system stability under load.
MT47H64M8CB-3:B Applications
- Automotive Navigation Systems: Utilized for its fast data access speeds and reliability, essential for real-time system responsiveness in vehicle navigation and multimedia streaming.
- Enterprise Networking Equipment: Supports the high throughput and storage demands of network routers, switches, and other infrastructure, ensuring efficient data flow and system performance.
- High-Performance Computing (HPC): Serves as a critical component in supercomputers and data centers requiring high bandwidth memory for processing large datasets and performing complex calculations.
- Consumer Electronics: Embedded in devices such as high-definition televisions and gaming consoles, where high-speed memory is crucial for enhanced graphic displays and user interface responsiveness.
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