MT47H64M4BP-37E:B
- Mfr.Part #
- MT47H64M4BP-37E:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60FBGA
- Stock
- 7,352
- In Stock :
- 7,352
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Surface Mount :
- yes
- Number of Ports :
- 1
- Lead Free :
- Lead Free
- Base Part Number :
- MT47H64M4
- Supply Voltage-Max (Vsup) :
- 1.9V
- Operating Supply Voltage :
- 1.8V
- I/O Type :
- COMMON
- Operating Temperature :
- 0°C~85°C TC
- Number of Functions :
- 1
- Organization :
- 64MX4
- Terminal Pitch :
- 0.8mm
- Supply Voltage :
- 1.8V
- Operating Mode :
- SYNCHRONOUS
- Voltage - Supply :
- 1.7V~1.9V
- Number of Terminations :
- 60
- Access Time :
- 500ps
- Additional Feature :
- AUTO/SELF REFRESH
- Length :
- 12mm
- Memory Size :
- 256Mb 64M x 4
- Height Seated (Max) :
- 1.2mm
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Memory Interface :
- Parallel
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8542.32.00.24
- Mounting Type :
- Surface Mount
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tray
- Clock Frequency :
- 267MHz
- Output Characteristics :
- 3-STATE
- Sequential Burst Length :
- 48
- Memory Width :
- 4
- Package / Case :
- 60-FBGA
- JESD-609 Code :
- e1
- Write Cycle Time - Word, Page :
- 15ns
- Memory Type :
- Volatile
- Refresh Cycles :
- 8192
- Width :
- 8mm
- Memory Format :
- DRAM
- Interleaved Burst Length :
- 48
- Pin Count :
- 60
- Memory Density :
- 268435456 bit
- Supply Voltage-Min (Vsup) :
- 1.7V
- JESD-30 Code :
- R-PBGA-B60
- Standby Current-Max :
- 0.005A
- Supply Current-Max :
- 0.24mA
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- MT47H64M4BP-37E:B

Memory Micron Technology MT47H64M4BP-37E:B Overview
Discover the pinnacle of memory technology with Micron Technology's MT47H64M4BP-37E:B. Designed to meet the demands of high-performance applications, this IC DRAM offers unparalleled speed and reliability. With a capacity of 256MBIT and utilizing a parallel 60FBGA interface, it ensures seamless data transfer and efficient operation. Whether you're powering cutting-edge computing systems or driving innovative IoT devices, this memory solution delivers the performance and stability your projects demand.
MT47H64M4BP-37E:B Features
- High Capacity: With 256MBIT of storage, this DRAM provides ample space for storing critical data.
- Parallel Interface: The 60FBGA parallel interface enables rapid data transfer, optimizing system performance.
- Reliability: Built by Micron Technology, a trusted name in memory solutions, this IC DRAM offers exceptional reliability and longevity.
- Compatibility: Compatible with a wide range of devices and systems, ensuring seamless integration into your existing infrastructure.
MT47H64M4BP-37E:B Applications
- Embedded Systems: Power your embedded systems with the MT47H64M4BP-37E:B, providing fast and reliable memory for industrial automation, automotive electronics, and more.
- Networking Equipment: Enhance the performance of networking equipment such as routers, switches, and gateways with this high-capacity DRAM, ensuring smooth data processing and transfer.
- Telecommunications: Enable faster communication and data processing in telecommunications equipment, including base stations, telephony systems, and network infrastructure.
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