MT47H64M16NF-187E:M

Manufacturer :

Micron Technology

Product Category :

Memory

Pbfree Code :

yes

Supply Voltage :

1.8V

Length :

12.5mm

Terminal Pitch :

0.8mm

Packaging :

Bulk

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

30

Memory Type :

Volatile

Supply Voltage-Max (Vsup) :

1.9V

Peak Reflow Temperature (Cel) :

260

I/O Type :

COMMON

Memory Format :

DRAM

Memory Size :

1Gb 64M x 16

Voltage - Supply :

1.7V~1.9V

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

BOTTOM

Density :

1 Gb

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Max Frequency :

533MHz

Sequential Burst Length :

48

Number of Ports :

1

Base Part Number :

MT47H64M16

Interleaved Burst Length :

48

Published :

2014

Additional Feature :

AUTO/SELF REFRESH

Radiation Hardening :

No

Number of Terminations :

84

Supply Voltage-Min (Vsup) :

1.7V

Number of Functions :

1

Height Seated (Max) :

1.2mm

Package / Case :

84-TFBGA

Memory Width :

16

Number of Pins :

84

Organization :

64MX16

JESD-609 Code :

e1

HTS Code :

8542.32.00.32

Mounting Type :

Surface Mount

Refresh Cycles :

8192

Surface Mount :

yes

Address Bus Width :

13b

Operating Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Access Time :

350ps

Output Characteristics :

3-STATE

Pin Count :

84

Operating Temperature :

0°C~85°C TC

Write Cycle Time - Word, Page :

15ns

Data Bus Width :

16b