MT47H64M16HR-3 L:G
- Mfr.Part #
- MT47H64M16HR-3 L:G
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 84FBGA
- Stock
- 13,280
- In Stock :
- 13,280
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Packaging :
- Tray
- Supply Current-Max :
- 0.35mA
- Width :
- 8mm
- JESD-30 Code :
- R-PBGA-B84
- Access Time :
- 450ps
- Sequential Burst Length :
- 48
- Additional Feature :
- AUTO/SELF REFRESH
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Ports :
- 1
- Memory Interface :
- Parallel
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Density :
- 1073741824 bit
- Pin Count :
- 84
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Length :
- 12.5mm
- Memory Width :
- 16
- Refresh Cycles :
- 8192
- Clock Frequency :
- 333MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Surface Mount :
- yes
- Memory Size :
- 1Gb 64M x 16
- Output Characteristics :
- 3-STATE
- I/O Type :
- COMMON
- Operating Mode :
- SYNCHRONOUS
- Height Seated (Max) :
- 1.2mm
- Terminal Position :
- BOTTOM
- Base Part Number :
- MT47H64M16
- Supply Voltage :
- 1.8V
- JESD-609 Code :
- e1
- Published :
- 2010
- Terminal Pitch :
- 0.8mm
- Organization :
- 64MX16
- HTS Code :
- 8542.32.00.32
- Standby Current-Max :
- 0.007A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Memory Format :
- DRAM
- Operating Temperature :
- 0°C~85°C TC
- Power Supplies :
- 1.8V
- Number of Terminations :
- 84
- Peak Reflow Temperature (Cel) :
- 260
- Interleaved Burst Length :
- 48
- Memory Type :
- Volatile
- Write Cycle Time - Word, Page :
- 15ns
- Package / Case :
- 84-TFBGA
- Number of Functions :
- 1
- Voltage - Supply :
- 1.7V~1.9V
- Supply Voltage-Max (Vsup) :
- 1.9V
- Datasheets
- MT47H64M16HR-3 L:G

Memory Micron Technology MT47H64M16HR-3 L:G Overview
The Memory Micron Technology MT47H64M16HR-3 L:G is an advanced IC DRAM component designed to meet the rigorous demands of modern electronic devices. This 1 Gbit DRAM from Micron Technology is engineered in a compact 84FBGA package, ensuring high-density memory integration while maintaining a small footprint. Its high-speed performance and reliability make it an ideal choice for manufacturers looking to enhance the capabilities of their products with superior memory solutions. This DRAM module is perfect for applications that require large-volume data processing and high-speed operations, making it a strategic component for boosting overall system performance.
MT47H64M16HR-3 L:G Features
The MT47H64M16HR-3 L:G boasts a number of features that distinguish it in the field of memory technology. Its 1 Gbit storage capacity allows for substantial data management within a single module. The parallel interface ensures efficient communication and data transfer rates, crucial for applications requiring rapid access to large amounts of data. Additionally, the compact 84FBGA packaging makes it ideal for systems where space is at a premium but performance cannot be compromised.
MT47H64M16HR-3 L:G Applications
- Computing Systems: Utilized in desktops, laptops, and servers for enhanced memory capacity which allows for smoother operation and improved handling of large software applications.
- Mobile Devices: Integrated into smartphones and tablets to increase the multitasking capabilities and enhance user experience with faster data access and reduced lag.
- Gaming Consoles: Employed in gaming hardware to manage complex graphics and gameplay data, ensuring quick loading times and high-definition performance.
- Industrial Automation: Used in sophisticated industrial systems requiring rapid processing of large datasets for real-time control and monitoring applications.
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