MT47H512M4THN-25E:H

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Position :

BOTTOM

Supply Voltage-Max (Vsup) :

1.9V

Package / Case :

63-TFBGA

Supply Voltage-Min (Vsup) :

1.7V

Output Characteristics :

3-STATE

Supply Voltage :

1.8V

Operating Temperature :

0°C~85°C TC

Memory Interface :

Parallel

Max Frequency :

800MHz

Data Bus Width :

4B

Memory Format :

DRAM

Length :

10mm

Mounting Type :

Surface Mount

Memory Size :

2Gb 512M x 4

Packaging :

Tray

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile

Base Part Number :

MT47H512M4

Radiation Hardening :

No

Refresh Cycles :

8192

Lead Free :

Lead Free

Organization :

512MX4

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Voltage - Supply :

1.7V~1.9V

Access Time :

400ps

Additional Feature :

AUTO/SELF REFRESH

Mount :

Surface Mount

Published :

2002

Standby Current-Max :

0.014A

Height Seated (Max) :

1.2mm

Address Bus Width :

17b

Nominal Supply Current :

132mA

Operating Supply Voltage :

1.8V

Density :

2 GB

Write Cycle Time - Word, Page :

15ns

Number of Terminations :

63

Number of Pins :

63

RoHS Status :

ROHS3 Compliant

Clock Frequency :

400MHz

Number of Functions :

1

Number of Ports :

1

Memory Width :

4