MT47H512M4EB-3:C

Manufacturer :

Micron Technology

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

Voltage - Supply :

1.7V~1.9V

ECCN Code :

EAR99

Supply Current-Max :

0.225mA

Packaging :

Tray

Memory Format :

DRAM

Length :

11.5mm

Supply Voltage-Max (Vsup) :

1.9V

Standby Current-Max :

0.012A

Memory Width :

4

Pin Count :

60

Lead Free :

Lead Free

Terminal Pitch :

0.8mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sequential Burst Length :

48

Mounting Type :

Surface Mount

Pbfree Code :

yes

Access Time :

450ps

Base Part Number :

MT47H512M4

Height Seated (Max) :

1.2mm

Number of Ports :

1

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

Additional Feature :

AUTO/SELF REFRESH

Refresh Cycles :

8192

Number of Functions :

1

Clock Frequency :

333MHz

Operating Temperature :

0°C~85°C TC

Operating Supply Voltage :

1.8V

I/O Type :

COMMON

JESD-609 Code :

e1

Output Characteristics :

3-STATE

Memory Type :

Volatile

Density :

2 GB

Organization :

512MX4

Data Bus Width :

4B

Write Cycle Time - Word, Page :

15ns

Supply Voltage :

1.8V

Interleaved Burst Length :

48

Terminal Position :

BOTTOM

Max Frequency :

667MHz

Published :

2012

Number of Pins :

60

Number of Terminations :

60

HTS Code :

8542.32.00.36

Surface Mount :

yes

Address Bus Width :

18b

Supply Voltage-Min (Vsup) :

1.7V

Memory Size :

2Gb 512M x 4

Memory Interface :

Parallel

Package / Case :

60-TFBGA

RoHS Status :

ROHS3 Compliant