MT47H32M8BP-5E:B
- Mfr.Part #
- MT47H32M8BP-5E:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60FBGA
- Stock
- 14,927
- In Stock :
- 14,927
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Surface Mount :
- yes
- Memory Interface :
- Parallel
- Qualification Status :
- Not Qualified
- Supply Voltage-Max (Vsup) :
- 1.9V
- Supply Current-Max :
- 0.23mA
- Length :
- 12mm
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Write Cycle Time - Word, Page :
- 15ns
- Access Time :
- 600ps
- Operating Temperature :
- 0°C~85°C TC
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- MT47H32M8B
- Memory Type :
- Volatile
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage :
- 1.8V
- Operating Mode :
- SYNCHRONOUS
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Size :
- 256Mb 32M x 8
- Voltage - Supply :
- 1.7V~1.9V
- Clock Frequency :
- 200MHz
- HTS Code :
- 8542.32.00.24
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- JESD-30 Code :
- R-PBGA-B60
- Number of Functions :
- 1
- Memory Format :
- DRAM
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Width :
- 8
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Interleaved Burst Length :
- 48
- Operating Supply Voltage :
- 1.8V
- Mounting Type :
- Surface Mount
- Terminal Pitch :
- 0.8mm
- I/O Type :
- COMMON
- Published :
- 2005
- Memory Density :
- 268435456 bit
- Package / Case :
- 60-FBGA
- Refresh Cycles :
- 8192
- Organization :
- 32MX8
- Pin Count :
- 60
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Number of Ports :
- 1
- Standby Current-Max :
- 0.005A
- Width :
- 8mm
- Sequential Burst Length :
- 48
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height Seated (Max) :
- 1.2mm
- Output Characteristics :
- 3-STATE
- Packaging :
- Tray
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 60
- Datasheets
- MT47H32M8BP-5E:B

Memory Micron Technology MT47H32M8BP-5E:B Overview
The Memory Micron Technology MT47H32M8BP-5E:B is a high-performance DRAM (Dynamic Random Access Memory) chip, designed to meet the demanding specifications required for advanced digital computing systems. This IC features a dense 256Mbit configuration, encapsulated in a compact 60-ball FBGA (Fine-pitch Ball Grid Array) package. Tailored for applications where space and power efficiency are critical, this DRAM module provides a robust parallel interface, making it an ideal solution for enhancing multitasking and improving system responsiveness in a variety of technology deployments.
MT47H32M8BP-5E:B Features
Key features of the MT47H32M8BP-5E:B include its high-speed data transfer capabilities and low latency response. The device operates efficiently across a wide range of temperatures, which makes it suitable for rigorous industrial applications. Additionally, its reliability and durability are enhanced by Micron's cutting-edge manufacturing processes, ensuring long-term performance stability and minimal power consumption.
MT47H32M8BP-5E:B Applications
- Mobile Phones: Utilized for managing multiple applications and user interfaces simultaneously, enhancing the multitasking capabilities and overall user experience.
- Personal Computers: Provides the necessary bandwidth and speed for handling complex tasks and running demanding applications, crucial for both consumer and business environments.
- Embedded Systems: Key component in various embedded solutions, facilitating rapid data access and reliable performance in systems such as GPS units, automotive infotainment, and industrial control systems.
- Networking Equipment: Supports high-speed data processing and storage in routers, switches, and other networking hardware, essential for maintaining robust connectivity and throughput.
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