MT47H32M16CC-5E L:B
- Mfr.Part #
- MT47H32M16CC-5E L:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 6,859
- In Stock :
- 6,859
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Mounting Type :
- Surface Mount
- Memory Size :
- 512Mb 32M x 16
- Package / Case :
- 84-TFBGA
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 84
- Power Supplies :
- 1.8V
- Standby Current-Max :
- 0.007A
- Output Characteristics :
- 3-STATE
- Supply Current-Max :
- 0.34mA
- Base Part Number :
- MT47H32M16
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Write Cycle Time - Word, Page :
- 15ns
- Refresh Cycles :
- 8192
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 84
- Interleaved Burst Length :
- 48
- Sequential Burst Length :
- 48
- Peak Reflow Temperature (Cel) :
- 260
- Clock Frequency :
- 200MHz
- JESD-30 Code :
- R-PBGA-B84
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Width :
- 16
- I/O Type :
- COMMON
- Access Time :
- 600ps
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 0°C~85°C TC
- Height Seated (Max) :
- 1.2mm
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Surface Mount :
- yes
- Organization :
- 32MX16
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage :
- 1.8V
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Published :
- 2008
- Terminal Position :
- BOTTOM
- Voltage - Supply :
- 1.7V~1.9V
- JESD-609 Code :
- e1
- Length :
- 12.5mm
- Terminal Pitch :
- 0.8mm
- Width :
- 12mm
- Memory Density :
- 536870912 bit
- Packaging :
- Tray
- Memory Type :
- Volatile
- Memory Format :
- DRAM
- Reach Compliance Code :
- Unknown
- Number of Functions :
- 1
- HTS Code :
- 8542.32.00.28
- Datasheets
- MT47H32M16CC-5E L:B

Memory Micron Technology MT47H32M16CC-5E L:B Overview
The Memory Micron Technology MT47H32M16CC-5E L:B is a high-performance Integrated Circuit (IC) that excels in delivering robust data storage and retrieval capabilities. This DRAM (Dynamic Random-Access Memory) module features a capacity of 512 Mbit, making it ideal for applications requiring rapid access to large volumes of data. Manufactured by Micron Technology, a leader in memory and storage solutions, this IC ensures reliability and performance with its advanced design structured in an 84FBGA (Fine Ball Grid Array) package. The design optimizes electrical performance and simplifies PCB design, making it a preferred choice for sophisticated electronic systems.
MT47H32M16CC-5E L:B Features
This IC boasts a parallel interface, providing high-speed data transfer and enabling efficient communication between the memory module and other system components. The DRAM's architecture facilitates lower power consumption while maintaining high-speed operation, which is crucial for energy-sensitive applications. Its compact 84FBGA packaging not only saves space but also offers better thermal management compared to other packaging types.
MT47H32M16CC-5E L:B Applications
- Consumer Electronics: Used in devices like gaming consoles and high-performance personal computers where fast data access is critical for smooth user experience.
- Mobile Computing: Ideal for laptops and tablets, providing the necessary speed and efficiency for multitasking and media consumption.
- Networking Equipment: Deployed in routers and switches, enhancing data flow management across networks to ensure high-speed internet connectivity and reliable network performance.
- Automotive Systems: Supports advanced driver-assistance systems (ADAS) and infotainment systems, where rapid data processing is essential for both performance and safety.
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