MT47H32M16CC-5E:B
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- Mfr.Part #
- MT47H32M16CC-5E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 38,361
- In Stock ：
- 38,361
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Pin Count :
- 84
- Standby Current-Max :
- 0.007A
- Number of Functions :
- 1
- Access Time :
- 600ps
- Operating Temperature :
- 0°C~85°C TC
- Length :
- 12.5mm
- Organization :
- 32MX16
- Memory Width :
- 16
- Mount :
- Surface Mount
- Operating Mode :
- SYNCHRONOUS
- Density :
- 512 Mb
- Write Cycle Time - Word, Page :
- 15ns
- Memory Type :
- Volatile
- Package / Case :
- 84-TFBGA
- Supply Voltage :
- 1.8V
- Additional Feature :
- AUTO/SELF REFRESH
- Reach Compliance Code :
- Unknown
- Clock Frequency :
- 200MHz
- Terminal Position :
- BOTTOM
- Published :
- 2006
- Number of Pins :
- 84
- Refresh Cycles :
- 8192
- I/O Type :
- COMMON
- Output Characteristics :
- 3-STATE
- Supply Voltage-Max (Vsup) :
- 1.9V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MT47H32M16
- Memory Size :
- 512Mb 32M x 16
- Mounting Type :
- Surface Mount
- Memory Interface :
- Parallel
- Packaging :
- Tray
- Number of Terminations :
- 84
- Supply Voltage-Min (Vsup) :
- 1.7V
- Lead Free :
- Lead Free
- Voltage - Supply :
- 1.7V~1.9V
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- ECCN Code :
- EAR99
- Operating Supply Voltage :
- 1.8V
- HTS Code :
- 8542.32.00.28
- Qualification Status :
- Not Qualified
- Nominal Supply Current :
- 160mA
- Peak Reflow Temperature (Cel) :
- 260
- Address Bus Width :
- 15b
- JESD-609 Code :
- e1
- Terminal Pitch :
- 0.8mm
- Number of Ports :
- 1
- Memory Format :
- DRAM
- Height Seated (Max) :
- 1.2mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Sequential Burst Length :
- 48
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Interleaved Burst Length :
- 48
- Datasheets
- MT47H32M16CC-5E:B
Memory Micron Technology MT47H32M16CC-5E:B Overview
The Memory Micron Technology MT47H32M16CC-5E:B IC DRAM stands out as a high-performance component designed for critical applications that demand reliable data processing and storage. This 512Mbit DRAM operates in a parallel configuration and is housed in an 84FBGA package, providing a compact solution with optimal thermal management. Tailored for technical environments that require precision and efficiency, this memory module helps in achieving faster access times and increased throughput for data-intensive applications. Its robustness and high-speed data handling make it an ideal choice for manufacturers looking to incorporate reliable memory into their advanced electronic systems.
MT47H32M16CC-5E:B Features
- 512Mbit density for substantial data management capability.
- Parallel interface for enhanced data transfer speeds and reduced latency.
- 84FBGA package ensures minimal footprint and efficient thermal properties.
- High-speed operation and robust reliability cater to advanced computing needs.
MT47H32M16CC-5E:B Applications
- Automotive systems: Utilized in vehicle infotainment and navigation systems, improving performance and response times.
- Telecommunication equipment: Helps in managing large volumes of data transfer and storage in network hardware.
- Consumer electronics: Enhances user experience in devices like high-definition televisions and gaming consoles through faster data access.
- Computing applications: Integral in PCs and servers for reliable processing and efficient handling of multiple tasks simultaneously.
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