MT47H32M16CC-3E:B
- Mfr.Part #
- MT47H32M16CC-3E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 46,217
- In Stock :
- 46,217
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Surface Mount :
- yes
- JESD-30 Code :
- R-PBGA-B84
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Density :
- 536870912 bit
- Operating Mode :
- SYNCHRONOUS
- Height Seated (Max) :
- 1.2mm
- Sequential Burst Length :
- 48
- Supply Voltage-Max (Vsup) :
- 1.9V
- Terminal Pitch :
- 0.8mm
- Published :
- 2006
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Type :
- Volatile
- Refresh Cycles :
- 8192
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Current-Max :
- 0.35mA
- Lead Free :
- Lead Free
- Memory Size :
- 512Mb 32M x 16
- Base Part Number :
- MT47H32M16
- Length :
- 12.5mm
- Power Supplies :
- 1.8V
- Access Time :
- 450ps
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 1.8V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Memory Width :
- 16
- Output Characteristics :
- 3-STATE
- Memory Interface :
- Parallel
- Write Cycle Time - Word, Page :
- 15ns
- Package / Case :
- 84-TFBGA
- Interleaved Burst Length :
- 48
- HTS Code :
- 8542.32.00.28
- Memory Format :
- DRAM
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tray
- Standby Current-Max :
- 0.007A
- I/O Type :
- COMMON
- Number of Terminations :
- 84
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 0°C~85°C TC
- Organization :
- 32MX16
- Width :
- 12mm
- Voltage - Supply :
- 1.7V~1.9V
- Clock Frequency :
- 333MHz
- Pin Count :
- 84
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Number of Ports :
- 1
- Reach Compliance Code :
- Unknown
- Datasheets
- MT47H32M16CC-3E:B

Memory Micron Technology MT47H32M16CC-3E:B Overview
The Memory Micron Technology MT47H32M16CC-3E:B is an advanced DRAM chip designed for high-performance applications requiring substantial memory capacity and speed. Manufactured by Micron Technology, a leader in integrated circuit technology, this product integrates 512 Mbits of dynamic random-access memory (DRAM) into a compact 84FBGA package. Its robust design and efficiency make it ideal for sophisticated electronic systems requiring rapid data access and high reliability. This memory module is particularly suited for businesses looking to scale operations or enhance technological frameworks, making it an excellent choice for bulk purchasing.
MT47H32M16CC-3E:B Features
- High Capacity: 512 Mbit of DRAM provides substantial room for data storage and retrieval, facilitating complex computing tasks.
- Parallel Interface: Enables rapid data transfer rates which are essential for performance-critical applications.
- Compact 84FBGA Packaging: This small form factor allows for efficient use of space on printed circuit boards, supporting more dense configurations of memory arrays.
- Reliability: Produced by Micron Technology, known for its high standards in quality and durability, ensuring long-term performance.
MT47H32M16CC-3E:B Applications
- Computing Systems: Utilized in personal computers and servers for enhanced memory capacity which improves multitasking and application performance.
- Mobile Devices: Employs in smartphones and tablets where efficient memory usage is critical for device speed and responsiveness.
- Gaming Consoles: Integrated into gaming hardware to provide the high-speed, large-volume memory necessary for complex game environments and user interfaces.
- Industrial Systems: Applied in automated machinery and industrial computers which require robust and reliable memory solutions for optimal operation.
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