MT47H32M16CC-37E L:B
- Mfr.Part #
- MT47H32M16CC-37E L:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 6,272
- In Stock :
- 6,272
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Width :
- 12mm
- Number of Terminations :
- 84
- Write Cycle Time - Word, Page :
- 15ns
- Base Part Number :
- MT47H32M16
- Operating Temperature :
- 0°C~85°C TC
- Height Seated (Max) :
- 1.2mm
- Package / Case :
- 84-TFBGA
- Memory Interface :
- Parallel
- Supply Current-Max :
- 0.34mA
- Terminal Finish :
- TIN SILVER COPPER
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- I/O Type :
- COMMON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Interleaved Burst Length :
- 48
- Output Characteristics :
- 3-STATE
- Memory Size :
- 512Mb 32M x 16
- Supply Voltage-Max (Vsup) :
- 1.9V
- Published :
- 2008
- Terminal Pitch :
- 0.8mm
- Pin Count :
- 84
- Voltage - Supply :
- 1.7V~1.9V
- Memory Density :
- 536870912 bit
- Mounting Type :
- Surface Mount
- Access Time :
- 500ps
- Power Supplies :
- 1.8V
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Width :
- 16
- Number of Functions :
- 1
- Memory Type :
- Volatile
- Refresh Cycles :
- 8192
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 12.5mm
- ECCN Code :
- EAR99
- Number of Ports :
- 1
- JESD-30 Code :
- R-PBGA-B84
- Clock Frequency :
- 267MHz
- Memory Format :
- DRAM
- Operating Mode :
- SYNCHRONOUS
- HTS Code :
- 8542.32.00.28
- Organization :
- 32MX16
- Standby Current-Max :
- 0.007A
- Supply Voltage :
- 1.8V
- Packaging :
- Tray
- Supply Voltage-Min (Vsup) :
- 1.7V
- Sequential Burst Length :
- 48
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Datasheets
- MT47H32M16CC-37E L:B

Memory Micron Technology MT47H32M16CC-37E L:B Overview
The Memory Micron Technology MT47H32M16CC-37E L:B DRAM module is an essential component designed for high-performance computing applications requiring substantial data throughput and storage. With a capacity of 512Mbit and built on advanced semiconductor technology, this product is crafted to deliver reliable and efficient performance under demanding conditions. The use of a 84FBGA package allows for a compact form factor, which is crucial for modern electronic devices that demand high density and minimal power consumption. This IC is tailor-made for businesses looking to integrate robust memory systems into their hardware, ensuring longevity and stability.
MT47H32M16CC-37E L:B Features
This dynamic RAM module offers a variety of features that stand out in the competitive tech market, including high data integrity and low-power consumption. Its parallel interface ensures rapid data transfer rates, which is beneficial for applications that require high-speed data processing. The compact 84FBGA packaging not only reduces the physical space required on printed circuit boards but also enhances the thermal characteristics, thus improving the overall device reliability.
MT47H32M16CC-37E L:B Applications
- Advanced Computing Systems: Utilized in server farms and data centers due to its high capacity and speed, supporting extensive data processing and storage tasks.
- Consumer Electronics: Embedded in devices such as high-performance gaming consoles and personal computers, where rapid access to large amounts of data is crucial.
- Telecommunications: Critical for communication equipment like routers and switches, which rely on fast and reliable data exchange.
- Automotive Electronics: Applied in advanced driver-assistance systems (ADAS) and infotainment systems, requiring robust memory solutions for real-time processing.
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