MT47H32M16CC-37E:B
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- Mfr.Part #
- MT47H32M16CC-37E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84FBGA
- Stock
- 1,277
- In Stock ：
- 1,277
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Packaging :
- Tray
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Published :
- 2006
- Standby Current-Max :
- 0.007A
- Clock Frequency :
- 267MHz
- Number of Pins :
- 84
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 0°C~85°C TC
- Supply Voltage-Max (Vsup) :
- 1.9V
- Package / Case :
- 84-TFBGA
- HTS Code :
- 8542.32.00.28
- Number of Terminations :
- 84
- Number of Ports :
- 1
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Length :
- 12.5mm
- Reach Compliance Code :
- not_compliant
- Nominal Supply Current :
- 205mA
- Number of Functions :
- 1
- Access Time :
- 500ps
- Lead Free :
- Lead Free
- Memory Size :
- 512Mb 32M x 16
- Organization :
- 32MX16
- Memory Width :
- 16
- Terminal Position :
- BOTTOM
- Pin Count :
- 84
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage :
- 1.8V
- Write Cycle Time - Word, Page :
- 15ns
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Voltage - Supply :
- 1.7V~1.9V
- Density :
- 512 Mb
- Address Bus Width :
- 15b
- Interleaved Burst Length :
- 48
- Refresh Cycles :
- 8192
- I/O Type :
- COMMON
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Base Part Number :
- MT47H32M16
- Terminal Pitch :
- 0.8mm
- Output Characteristics :
- 3-STATE
- Additional Feature :
- AUTO/SELF REFRESH
- Sequential Burst Length :
- 48
- Height Seated (Max) :
- 1.2mm
- Operating Supply Voltage :
- 1.8V
- Memory Format :
- DRAM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Datasheets
- MT47H32M16CC-37E:B
Memory Micron Technology MT47H32M16CC-37E:B Overview
The Memory Micron Technology MT47H32M16CC-37E:B is a high-performance Integrated Circuit (IC) DRAM featuring a robust storage capacity of 512Mbit arranged in a parallel configuration. Housed in a compact 84FBGA package, this product leverages Micron Technology's advanced manufacturing techniques to offer exceptional reliability and speed, making it an ideal solution for applications requiring intensive bandwidth and low latency. Its design is specifically tailored to meet the rigorous demands of contemporary digital systems, offering both durability and high-grade data integrity.
MT47H32M16CC-37E:B Features
This DRAM IC excels in its class with several distinctive features:
- High-density memory capacity of 512Mbit allows for efficient data management and storage.
- Parallel interface ensures rapid data transfer rates that are essential for high-speed computing tasks.
- Compact 84FBGA packaging makes it suitable for space-constrained applications without sacrificing performance.
- Built using Micron’s cutting-edge technology, which provides enhanced reliability and power efficiency.
MT47H32M16CC-37E:B Applications
- Smartphones and Tablets: Utilized for its high-speed data processing capabilities which enhance multitasking and improve user experience.
- Computing: Integral in PCs and servers where large volumes of data are processed and high memory bandwidth is required.
- Automotive: Supports advanced automotive systems including infotainment and driver assist technologies which demand robust and reliable memory solutions.
- Industrial Applications: Ideal for use in complex industrial machines and systems that require high reliability and prolonged operational life.
- Networking: Critical for high-performance networking equipment, aiding in efficient data flow and storage within network infrastructure.
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