MT47H256M8EB-25E IT:C
- Mfr.Part #
- MT47H256M8EB-25E IT:C
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 2GBIT PARALLEL 60FBGA
- Stock
- 1,000
- In Stock :
- 1,000
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Ports :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Density :
- 2147483648 bit
- Packaging :
- Tray
- Access Time :
- 400ps
- Organization :
- 256MX8
- Number of Functions :
- 1
- Qualification Status :
- Not Qualified
- Supply Current-Max :
- 0.25mA
- Operating Mode :
- SYNCHRONOUS
- Height Seated (Max) :
- 1.2mm
- Additional Feature :
- AUTO/SELF REFRESH
- Power Supplies :
- 1.8V
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Memory Width :
- 8
- Published :
- 2011
- Sequential Burst Length :
- 48
- I/O Type :
- COMMON
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Surface Mount :
- yes
- Pin Count :
- 60
- Supply Voltage :
- 1.8V
- Base Part Number :
- MT47H256M8
- Refresh Cycles :
- 8192
- Operating Temperature :
- -40°C~95°C TC
- Clock Frequency :
- 400MHz
- Number of Terminations :
- 60
- Supply Voltage-Min (Vsup) :
- 1.7V
- Standby Current-Max :
- 0.012A
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Voltage - Supply :
- 1.7V~1.9V
- Memory Interface :
- Parallel
- JESD-30 Code :
- R-PBGA-B60
- Package / Case :
- 60-TFBGA
- Interleaved Burst Length :
- 48
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Output Characteristics :
- 3-STATE
- Width :
- 9mm
- HTS Code :
- 8542.32.00.36
- Terminal Pitch :
- 0.8mm
- Length :
- 11.5mm
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 2Gb 256M x 8
- Pbfree Code :
- yes
- Write Cycle Time - Word, Page :
- 15ns
- Memory Format :
- DRAM
- Datasheets
- MT47H256M8EB-25E IT:C

Memory Micron Technology MT47H256M8EB-25E IT:C Overview
The Memory Micron Technology MT47H256M8EB-25E IT:C is a high-performance DRAM (Dynamic Random-Access Memory) component, designed to meet the stringent demands of modern digital systems. With a robust 2Gbit capacity and an efficient parallel interface, this DRAM IC is encapsulated in a compact 60FBGA package that ensures minimal footprint on system boards while offering substantial memory density. Engineered by Micron Technology, one of the leaders in memory and storage solutions, this product is ideal for applications requiring high-speed data processing and significant storage capacity.
MT47H256M8EB-25E IT:C Features
- 2Gbit DRAM: Provides ample storage for complex processes and applications, ensuring smooth operation and high throughput.
- Parallel Interface: Facilitates faster data transfer rates compared to serial interfaces, which is crucial for high-performance computing environments.
- 60FBGA Package: Offers a compact form factor that is beneficial for modern electronic devices which require high density in a small space.
MT47H256M8EB-25E IT:C Applications
- Computing Systems: Used in desktops, laptops, and servers where high memory bandwidth and capacity are necessary for efficient processing.
- Mobile Devices: Supports advanced mobile applications, enabling faster multitasking and improved user experience in smartphones and tablets.
- Gaming Consoles: Enhances gaming performance by facilitating rapid game loading times and complex game data processing.
- Networking Equipment: Crucial for routers and switches which require high-speed data buffer management to handle large network traffic efficiently.
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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