MT47H256M8EB-25E:C

Manufacturer :

Micron Technology

Product Category :

Memory

Height Seated (Max) :

1.2mm

Length :

11.5mm

Number of Pins :

60

Sequential Burst Length :

48

Operating Temperature :

0°C~85°C TC

Data Bus Width :

8B

Refresh Cycles :

8192

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

1.9V

Organization :

256MX8

Density :

2 GB

Write Cycle Time - Word, Page :

15ns

Number of Ports :

1

Memory Type :

Volatile

JESD-609 Code :

e1

Supply Voltage :

1.8V

Operating Supply Voltage :

1.8V

Base Part Number :

MT47H256M8

Published :

2011

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Contact Plating :

Copper, Silver, Tin

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Nominal Supply Current :

130mA

Number of Terminations :

60

Memory Interface :

Parallel

Mount :

Surface Mount

Mounting Type :

Surface Mount

Clock Frequency :

400MHz

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

60-TFBGA

Voltage - Supply :

1.7V~1.9V

I/O Type :

COMMON

Terminal Position :

BOTTOM

Pin Count :

60

Memory Width :

8

Standby Current-Max :

0.012A

Packaging :

Tray

Max Frequency :

800MHz

Lead Free :

Lead Free

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Address Bus Width :

18b

Radiation Hardening :

No

Memory Size :

2Gb 256M x 8

Output Characteristics :

3-STATE

HTS Code :

8542.32.00.36

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Factory Lead Time :

4 Weeks

Additional Feature :

AUTO/SELF REFRESH

Peak Reflow Temperature (Cel) :

260

Memory Format :

DRAM

Pbfree Code :

yes

Access Time :

400ps