MT47H256M4CF-25:H
- Mfr.Part #
- MT47H256M4CF-25:H
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 60FBGA
- Stock
- 5,242
- In Stock :
- 5,242
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Voltage - Supply :
- 1.7V~1.9V
- Write Cycle Time - Word, Page :
- 15ns
- Operating Supply Voltage :
- 1.8V
- Terminal Finish :
- TIN SILVER COPPER
- Number of Functions :
- 1
- Supply Current-Max :
- 0.21mA
- Package / Case :
- 60-TFBGA
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Clock Frequency :
- 400MHz
- Terminal Pitch :
- 0.8mm
- Pin Count :
- 60
- Number of Ports :
- 1
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Density :
- 1 Gb
- Memory Type :
- Volatile
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Memory Format :
- DRAM
- Refresh Cycles :
- 8192
- Supply Voltage :
- 1.8V
- Surface Mount :
- yes
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Size :
- 1Gb 256M x 4
- Data Bus Width :
- 4B
- JESD-609 Code :
- e1
- Interleaved Burst Length :
- 48
- Memory Width :
- 4
- Length :
- 10mm
- Max Frequency :
- 800MHz
- Supply Voltage-Min (Vsup) :
- 1.7V
- Address Bus Width :
- 17b
- Number of Pins :
- 60
- HTS Code :
- 8542.32.00.32
- Organization :
- 256MX4
- Output Characteristics :
- 3-STATE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sequential Burst Length :
- 48
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Interface :
- Parallel
- Pbfree Code :
- yes
- Additional Feature :
- AUTO/SELF REFRESH
- Operating Temperature :
- 0°C~85°C TC
- Height Seated (Max) :
- 1.2mm
- Access Time :
- 400ps
- Base Part Number :
- MT47H256M4
- Number of Terminations :
- 60
- Published :
- 2012
- I/O Type :
- COMMON
- Mounting Type :
- Surface Mount
- Datasheets
- MT47H256M4CF-25:H

Memory Micron Technology MT47H256M4CF-25:H Overview
The Memory Micron Technology MT47H256M4CF-25:H is an advanced DRAM chip designed by Micron Technology, one of the leading names in memory and storage solutions. This 1Gbit dynamic random-access memory (DRAM) component is packaged in a compact 60-ball fine-pitch BGA (FBGA) package, enabling high-density memory integration for a variety of advanced computing applications. The part offers exceptional speed and reliability, ideal for systems that require rapid access to large volumes of data. Its performance and compact form factor make it particularly suited for high-performance applications that demand robust memory solutions.
MT47H256M4CF-25:H Features
The MT47H256M4CF-25:H DRAM is engineered for performance, offering features such as a fast data rate and a parallel interface, which facilitates quicker data processing and throughput. This DRAM component operates at a standard temperature range, making it versatile for use in a variety of operating environments. The reliability of the device is backed by Micron's rigorous quality standards, ensuring peak performance and durability for critical applications.
MT47H256M4CF-25:H Applications
- Computing Systems: Utilized in desktops, laptops, and servers where large amounts of volatile memory are needed for efficient data processing and multitasking.
- Networking Equipment: Ideal for routers and switches that require high-speed memory for managing large data flows and maintaining fast network communications.
- Telecommunications Systems: Supports telecommunications infrastructure by providing memory needed for high-speed signal processing and data transmission.
- Consumer Electronics: Used in gaming consoles and high-performance home entertainment systems where rapid access to data enhances user experience.
- Industrial Applications: Provides reliable memory solutions for industrial automation systems, where durability and operational stability are critical.
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