MT47H16M16BG-5E:B TR

Memory Micron Technology MT47H16M16BG-5E:B TR Overview

The Memory Micron Technology MT47H16M16BG-5E:B TR is an advanced 256Mbit DRAM integrated circuit, engineered using Micron Technology's cutting-edge processes. This product features a parallel interface and is packaged in an 84FBGA format, which ensures compactness and high-density deployment. Designed to address the rigorous demands of high-speed computing and data processing applications, this DRAM module is ideal for businesses looking to enhance their technology infrastructure with reliable and efficient memory solutions. Its high capacity and speed make it particularly suitable for applications requiring rapid access to large amounts of data.

MT47H16M16BG-5E:B TR Features

This DRAM module offers several key features, including a fast data rate and low latency, which are critical for high-performance computing environments. The 256Mbit density allows for substantial data storage within a small footprint, making it an excellent choice for systems where space and power efficiency are paramount. Additionally, its robust design is tailored for extended durability and stable performance, enhancing system reliability.

MT47H16M16BG-5E:B TR Applications

• Computing Systems: Utilized in desktops and servers, this DRAM helps manage large datasets and complex processes, ensuring efficient system performance.
• Telecommunications Equipment: Critical for managing data throughput and buffering in network devices such as routers and switches.
• Automotive Electronics: Supports advanced driver-assistance systems (ADAS) by processing large amounts of sensor data for real-time decision making.
• Gaming Consoles: Enhances gaming experiences by speeding up graphics rendering and game load times.
• Mobile Devices: Used in smartphones and tablets to provide the necessary speed and capacity for multitasking and media consumption.