MT47H16M16BG-3E:B
- Mfr.Part #
- MT47H16M16BG-3E:B
- Manufacturer
- Micron Technology
- Package / Case
- 84-FBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 84FBGA
- Stock
- 29,617
- In Stock :
- 29,617
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Pbfree Code :
- yes
- Refresh Cycles :
- 8192
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Access Time :
- 450ps
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Voltage - Supply :
- 1.7V~1.9V
- Standby Current-Max :
- 0.005A
- Operating Temperature :
- 0°C~85°C TC
- Supply Voltage-Max (Vsup) :
- 1.9V
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Terminations :
- 84
- Radiation Hardening :
- No
- Terminal Pitch :
- 0.8mm
- Sequential Burst Length :
- 48
- Base Part Number :
- MT47H16M16
- Number of Functions :
- 1
- Lead Free :
- Lead Free
- Density :
- 256 Mb
- Pin Count :
- 84
- Packaging :
- Box
- Number of Ports :
- 1
- Height Seated (Max) :
- 1.2mm
- Output Characteristics :
- 3-STATE
- Operating Supply Voltage :
- 1.8V
- Nominal Supply Current :
- 215mA
- Length :
- 14mm
- JESD-609 Code :
- e1
- Mounting Type :
- Surface Mount
- Data Bus Width :
- 16b
- Memory Size :
- 256Mb 16M x 16
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Width :
- 16
- Clock Frequency :
- 333MHz
- Terminal Position :
- BOTTOM
- Organization :
- 16MX16
- HTS Code :
- 8542.32.00.24
- Address Bus Width :
- 15b
- Memory Interface :
- Parallel
- Package / Case :
- 84-FBGA
- Write Cycle Time - Word, Page :
- 15ns
- Memory Type :
- Volatile
- I/O Type :
- COMMON
- Number of Pins :
- 84
- Memory Format :
- DRAM
- Supply Voltage :
- 1.8V
- Interleaved Burst Length :
- 48
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MT47H16M16BG-3E:B

Memory Micron Technology MT47H16M16BG-3E:B Overview
The Memory Micron Technology MT47H16M16BG-3E:B is a high-performance IC DRAM featuring a 256Mbit capacity and an efficient parallel interface, encapsulated in an 84-pin FBGA (Fine-Pitch Ball Grid Array) package. This product is designed to meet the high-speed operational requirements of advanced computing systems, offering reliable data storage and rapid access capabilities. Its robust architecture enables enhanced durability and optimum functionality, making it an ideal choice for manufacturers seeking dependable memory solutions for their high-end applications. The integration of advanced technology by Micron Technology ensures that this memory component delivers superior performance, scalability, and power efficiency, making it particularly suitable for bulk purchasing by B2B customers focused on assembling high-performance computing devices.
MT47H16M16BG-3E:B Features
The MT47H16M16BG-3E:B boasts several key features that distinguish it in the market:
- High Capacity: 256Mbit of dynamic RAM accommodates substantial data volumes.
- Parallel Interface: Facilitates quick and efficient data transfer rates.
- Compact 84FBGA Packaging: Ensures a minimal footprint on the system board, ideal for compact system designs.
- High Data Reliability: Manufactured by Micron Technology, known for its rigorous quality control.
MT47H16M16BG-3E:B Applications
- Computing Systems: Serves as primary DRAM in servers and high-performance computers, facilitating fast processing and multitasking capabilities.
- Networking Hardware: Used in routers and switches to manage data flow efficiently across networks.
- Consumer Electronics: Ideal for use in devices such as gaming consoles and smart TVs, enhancing graphical and processing power.
- Automotive Applications: Supports advanced automotive systems, including infotainment and navigation systems, requiring rapid data access and processing.
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