MT47H128M8JN-25E:H

Manufacturer :

Micron Technology

Product Category :

Memory

Data Bus Width :

8B

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

235

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

Number of Ports :

1

HTS Code :

8542.32.00.32

Organization :

128MX8

Max Frequency :

800MHz

Memory Width :

8

Terminal Position :

BOTTOM

Package / Case :

60-TFBGA

Additional Feature :

AUTO/SELF REFRESH

Pin Count :

60

Terminal Pitch :

0.8mm

Pbfree Code :

No

Clock Frequency :

400MHz

Interleaved Burst Length :

48

Surface Mount :

yes

Number of Terminations :

60

Output Characteristics :

3-STATE

Memory Type :

Volatile

ECCN Code :

EAR99

Packaging :

Tray

Terminal Finish :

TIN LEAD SILVER

Write Cycle Time - Word, Page :

15ns

Operating Supply Voltage :

1.8V

Supply Voltage :

1.8V

Published :

2011

RoHS Status :

ROHS3 Compliant

Length :

10mm

Supply Voltage-Max (Vsup) :

1.9V

Access Time :

400ps

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Supply Current-Max :

0.21mA

Address Bus Width :

17b

Number of Functions :

1

Refresh Cycles :

8192

I/O Type :

COMMON

Voltage - Supply :

1.7V~1.9V

Density :

1 Gb

Base Part Number :

MT47H128M8

Supply Voltage-Min (Vsup) :

1.7V

Number of Pins :

60

Sequential Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e0

Memory Size :

1Gb 128M x 8

Operating Temperature :

0°C~85°C TC