MT47H128M8CF-3:H

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Max Frequency :

667MHz

Pin Count :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sequential Burst Length :

48

Length :

10mm

Lead Free :

Lead Free

Terminal Pitch :

0.8mm

Terminal Position :

BOTTOM

Supply Voltage-Min (Vsup) :

1.7V

Number of Terminations :

60

Mounting Type :

Surface Mount

Interleaved Burst Length :

48

Density :

1 Gb

Voltage - Supply :

1.7V~1.9V

Supply Voltage-Max (Vsup) :

1.9V

Package / Case :

60-TFBGA

Nominal Supply Current :

115mA

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Published :

2008

Memory Size :

1Gb 128M x 8

Organization :

128MX8

Additional Feature :

AUTO/SELF REFRESH

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Output Characteristics :

3-STATE

Base Part Number :

MT47H128M8

Memory Format :

DRAM

ECCN Code :

EAR99

Operating Temperature :

0°C~85°C TC

Number of Pins :

60

Clock Frequency :

333MHz

Supply Voltage :

1.8V

Operating Supply Voltage :

1.8V

Memory Width :

8

Contact Plating :

Copper, Silver, Tin

Memory Type :

Volatile

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Functions :

1

JESD-609 Code :

e1

Access Time :

450ps

Packaging :

Tray

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Data Bus Width :

8B

Mount :

Surface Mount

Address Bus Width :

17b

HTS Code :

8542.32.00.32

Refresh Cycles :

8192