MT47H128M8CF-25E:H
- Mfr.Part #
- MT47H128M8CF-25E:H
- Manufacturer
- Micron Technology
- Package / Case
- 60-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 1GBIT PARALLEL 60FBGA
- Stock
- 26,621
- In Stock :
- 26,621
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Mounting Type :
- Surface Mount
- Additional Feature :
- AUTO/SELF REFRESH
- Pbfree Code :
- yes
- Number of Terminations :
- 60
- Supply Voltage :
- 1.8V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 1.9V
- Terminal Pitch :
- 0.8mm
- Clock Frequency :
- 400MHz
- Output Characteristics :
- 3-STATE
- ECCN Code :
- EAR99
- Pin Count :
- 60
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Ports :
- 1
- Access Time :
- 400ps
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 60
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Size :
- 1Gb 128M x 8
- RoHS Status :
- ROHS3 Compliant
- Organization :
- 128MX8
- Height Seated (Max) :
- 1.2mm
- Refresh Cycles :
- 8192
- Density :
- 1 Gb
- Operating Supply Voltage :
- 1.8V
- Interleaved Burst Length :
- 48
- Published :
- 2012
- Packaging :
- Tray
- Write Cycle Time - Word, Page :
- 15ns
- Number of Functions :
- 1
- Memory Format :
- DRAM
- HTS Code :
- 8542.32.00.32
- Mount :
- Surface Mount
- Data Bus Width :
- 8B
- Supply Voltage-Min (Vsup) :
- 1.7V
- I/O Type :
- COMMON
- Operating Temperature :
- 0°C~85°C TC
- Address Bus Width :
- 17b
- JESD-609 Code :
- e1
- Radiation Hardening :
- No
- Package / Case :
- 60-TFBGA
- Sequential Burst Length :
- 48
- Memory Interface :
- Parallel
- Max Frequency :
- 800MHz
- Base Part Number :
- MT47H128M8
- Voltage - Supply :
- 1.7V~1.9V
- Nominal Supply Current :
- 125mA
- Memory Width :
- 8
- Length :
- 10mm
- Datasheets
- MT47H128M8CF-25E:H

Memory Micron Technology MT47H128M8CF-25E:H Overview
The Memory Micron Technology MT47H128M8CF-25E:H is a high-performance 1Gbit DRAM integrated circuit, leveraging advanced design to deliver exceptional parallel processing capabilities. Packaged in a compact 60FBGA format, this memory chip is engineered by Micron Technology, a leader in memory innovation, to provide robust data throughput and increased efficiency for demanding applications. Its reliability and scalability make it an ideal choice for industries seeking to optimize their high-speed computing and data-intensive applications, ensuring they can handle large volumes of data with ease and precision.
MT47H128M8CF-25E:H Features
This IC DRAM chip features 1Gbit of memory capacity, operating in a parallel interface configuration to enhance data transfer rates and reduce latency. The 60FBGA package is not only space-efficient but also offers better thermal management and electrical performance. The device is designed for a standard operating temperature range, making it suitable for a wide variety of commercial and industrial environments.
MT47H128M8CF-25E:H Applications
- Consumer Electronics: Utilized in smartphones, tablets, and gaming consoles to manage multiple applications running simultaneously without compromising performance.
- Computing Systems: Essential for laptops and desktops for fast data access and processing capabilities, enhancing overall system responsiveness.
- Networking Equipment: Used in routers and switches to ensure efficient data packet management and reliable connectivity across networks.
- Automotive Systems: Helps to manage in-vehicle infotainment systems and advanced driver assistance systems (ADAS) that require rapid data processing.
- Industrial Automation: Ideal for use in automated machinery and real-time processing units that require high-speed data handling and reliability.
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