MT47H128M4CB-5E:B
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- Mfr.Part #
- MT47H128M4CB-5E:B
- Manufacturer
- Micron Technology
- Package / Case
- 60-FBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 60FBGA
- Stock
- 40,088
- In Stock ：
- 40,088
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Refresh Cycles :
- 8192
- Memory Width :
- 4
- Memory Type :
- Volatile
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tray
- Additional Feature :
- AUTO/SELF REFRESH
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Interleaved Burst Length :
- 48
- Density :
- 512 Mb
- Access Time :
- 600ps
- Operating Mode :
- SYNCHRONOUS
- Memory Size :
- 512Mb 128M x 4
- Clock Frequency :
- 200MHz
- Length :
- 12mm
- Published :
- 2006
- Number of Terminations :
- 60
- Organization :
- 128MX4
- Number of Pins :
- 60
- Output Characteristics :
- 3-STATE
- I/O Type :
- COMMON
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Package / Case :
- 60-FBGA
- Moisture Sensitivity Level (MSL) :
- 5 (48 Hours)
- Standby Current-Max :
- 0.007A
- Nominal Supply Current :
- 115mA
- Height Seated (Max) :
- 1.2mm
- Number of Functions :
- 1
- Mount :
- Surface Mount
- Operating Supply Voltage :
- 1.8V
- Sequential Burst Length :
- 48
- Terminal Position :
- BOTTOM
- Supply Voltage :
- 1.8V
- Number of Ports :
- 1
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage-Min (Vsup) :
- 1.7V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 60
- HTS Code :
- 8542.32.00.28
- Operating Temperature :
- 0°C~85°C TC
- Voltage - Supply :
- 1.7V~1.9V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Pitch :
- 0.8mm
- Memory Interface :
- Parallel
- Supply Voltage-Max (Vsup) :
- 1.9V
- Mounting Type :
- Surface Mount
- Base Part Number :
- MT47H128M4
- Address Bus Width :
- 16b
- Memory Format :
- DRAM
- Write Cycle Time - Word, Page :
- 15ns
- Datasheets
- MT47H128M4CB-5E:B
Memory Micron Technology MT47H128M4CB-5E:B Overview
Introducing the Memory Micron Technology MT47H128M4CB-5E:B, a high-performance DRAM IC that combines efficiency with robust data management capabilities. Designed by Micron Technology, this component boasts a 512Mbit density, integrated into a compact 60-ball FBGA package. The MT47H128M4CB-5E:B is engineered to meet the demanding requirements of advanced electronic systems, offering both speed and reliability to handle substantial workloads. Its suitability for high-throughput applications makes it an essential asset for businesses looking to enhance their technological infrastructure.
MT47H128M4CB-5E:B Features
This DRAM IC excels in delivering efficient performance and stability, featuring a parallel interface for rapid data access and processing. With its advanced design, the MT47H128M4CB-5E:B facilitates improved power management and lower latency, crucial for systems requiring high-speed memory solutions. The compact 60FBGA package ensures minimal space usage while providing the reliability expected from a leading technology manufacturer like Micron.
MT47H128M4CB-5E:B Applications
- Advanced Computing Systems: Enhances processing power for high-performance computing tasks, including servers and workstations, by providing rapid data transfer and large bandwidth capabilities.
- Telecommunications Equipment: Used in telecom infrastructures to manage vast data flows, ensuring efficient operation and reliability in communications networks.
- Automotive Electronics: Supports advanced driver-assistance systems (ADAS) and other in-vehicle networks by ensuring fast and reliable data processing, critical for safety and performance.
- Consumer Electronics: Ideal for high-demand consumer products such as gaming consoles and smart TVs, offering enhanced graphic and processing speeds necessary for rich media experiences.
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