MSM5118160F-60T3K-MT

Memory ROHM Semiconductor MSM5118160F-60T3K-MT Overview

The ROHM Semiconductor MSM5118160F-60T3K-MT DRAM IC is an integral component in the design and functionality of advanced electronic systems, offering a substantial 16Mbit storage capacity. Designed for high-speed operation, this memory module utilizes a parallel interface, ensuring rapid data access and processing capabilities. Its compact 50TSOP package makes it ideal for applications where space is at a premium yet high memory density is required. The Memory ROHM Semiconductor MSM5118160F-60T3K-MT is tailored to meet the demands of a wide range of industrial and commercial applications, providing reliable and durable performance under varying operational conditions.

MSM5118160F-60T3K-MT Features

This memory module features a robust design capable of withstanding industrial temperatures and demands. With a 60 ns access time, it facilitates efficient performance for time-sensitive applications. The parallel interface of the MSM5118160F-60T3K-MT enhances its integration flexibility, making it suitable for a broad spectrum of technology solutions.

MSM5118160F-60T3K-MT Applications

• Computing Systems: Utilized in both personal and enterprise-level computers for managing operational data and multitasking processes efficiently.
• Telecommunications Equipment: Supports the high-speed processing needs of telecom infrastructures, contributing to improved system reliability and response times.
• Automotive Systems: Key component in automotive electronics where high data bandwidth and storage reliability are critical for vehicle performance and safety features.
• Consumer Electronics: Applied in devices like digital cameras and gaming consoles, enhancing user experience through increased memory capacity and speed.