MSCSM120DHM31CTBL2NG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

31mOhm @ 40A, 20V

Subcategory :

Discrete Semiconductor Modules

Input Capacitance (Ciss) (Max) @ Vds :

3020pF @ 1000V

Technology :

SiC

Type :

Asymmetrical Bridge SiC MOSFET Power Module

Configuration :

Asymmetrical Bridge

FET Type :

2 N-Channel (Dual) Asymmetrical

Product Status :

Active

Power - Max :

310W

Maximum Operating Temperature :

+ 175 C

Mounting Style :

Screw Mounts

Minimum Operating Temperature :

- 55 C

Product :

Power MOSFET Modules

Supplier Device Package :

-

Series :

-

Package :

Bulk

Base Product Number :

MSCSM120

Product Type :

Discrete Semiconductor Modules

Manufacturer :

Microchip

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

79A

Vf - Forward Voltage :

1.5 V at 30 A

Product Category :

Discrete Semiconductor Modules

Gate Charge (Qg) (Max) @ Vgs :

232nC @ 20V

Mounting Type :

Chassis Mount

Drain to Source Voltage (Vdss) :

1200V

Package / Case :

Module

Operating Temperature :

-55°C ~ 175°C (TJ)

Brand :

Microchip Technology / Atmel

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Rise Time :

30 ns

FET Feature :

Silicon Carbide (SiC)