MSCMC170AM08CT6LIAG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Supplier Device Package :

SP6C LI

FET Type :

2 N Channel (Phase Leg)

JESD-30 Code :

R-XUFM-X11

Package Shape :

RECTANGULAR

Transistor Element Material :

Silicon Carbide

Drain-source On Resistance-Max :

0.0117 Ω

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

1780 W

Input Capacitance (Ciss) (Max) @ Vds :

22000pF @ 1000V

Product Status :

Active

Drain Current-Max (Abs) (ID) :

280 A

Case Connection :

Isolated

Number of Elements :

2

Operating Temperature :

-40°C ~ 150°C (TJ)

Terminal Form :

UNSPECIFIED

Base Product Number :

MSCMC170

Pulsed Drain Current-Max (IDM) :

560 A

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

11

Package / Case :

Module

Rds On (Max) @ Id, Vgs :

11.7mOhm @ 300A, 20V

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Manufacturer :

Microsemi Corporation

Vgs(th) (Max) @ Id :

4V @ 108mA

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Package :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

1700V (1.7kV)

FET Feature :

Silicon Carbide (SiC)

Current - Continuous Drain (Id) @ 25°C :

280A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

1128nC @ 20V

Power - Max :

1780W (Tc)

DS Breakdown Voltage-Min :

1700 V

Series :

*

Configuration :

SERIES, 2 ELEMENTS