MSC2712GT1G
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- Mfr.Part #
- MSC2712GT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC59
- Stock
- 69,031
- In Stock ：
- 69,031
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MSC2712
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 100mA
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Transition Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Published :
- 2009
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 50V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Frequency :
- 50MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- MSC2712GT1G
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MSC2712GT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 6V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MSC2712GT1G Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
MSC2712GT1G Applications
There are a lot of ON Semiconductor
MSC2712GT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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