MRFE6VS25NR1

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Mfr.Part #
MRFE6VS25NR1
Manufacturer
NXP Semiconductors
Package / Case
TO-270AA
Datasheet
Download
Description
FET RF 133V 512MHZ TO270-2
Stock
1,050
In Stock :
1,050

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Published :
2006
Base Part Number :
MRFE6VS25
Power - Output :
25W
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Frequency :
512MHz
Number of Terminations :
2
Current - Test :
10mA
HTS Code :
8541.29.00.75
Operating Temperature (Min) :
-40°C
Terminal Form :
Flat
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
133V
Gain :
25.4dB
ECCN Code :
EAR99
JESD-30 Code :
R-PDFM-F2
Power Dissipation Ambient-Max :
25W
Factory Lead Time :
10 Weeks
Configuration :
Single
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Operating Temperature (Max) :
150°C
Voltage - Test :
50V
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated :
133V
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Transistor Type :
LDMOS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
TO-270AA
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Datasheets
MRFE6VS25NR1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors MRFE6VS25NR1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MRFE6VS25, Number of Terminations:2, Gain:25.4dB, Package / Case:TO-270AA, MRFE6VS25NR1 pinout, MRFE6VS25NR1 datasheet PDF, MRFE6VS25NR1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors MRFE6VS25NR1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors MRFE6VS25NR1


MRFE6VS25NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

MRFE6VS25NR1 Description


RF power transistors operating at frequencies between 1.8 to 2000 MHz that are intended for both narrowband and broadband ISM, broadcast, and aerospace applications. These components, which were created utilizing NXP's increased ruggedness platform, can be used in situations where high VSWRs are present.



MRFE6VS25NR1 Features


  • Extraordinary operating frequency range

  • High level of roughness

  • Unmatched, able to operate at very broad bandwidth

  • Integration of stability improvements

  • Low thermal conductivity

  • circuit for extended ESD protection



MRFE6VS25NR1 Applications


Switching applications


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