MRFE6S9060NR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated :

66V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

66V

Frequency :

880MHz

Current - Test :

450mA

Voltage - Test :

28V

Number of Terminations :

2

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gain :

21.1dB

JESD-30 Code :

R-PDFM-F2

Polarity/Channel Type :

N-Channel

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Factory Lead Time :

10 Weeks

Number of Elements :

1

ECCN Code :

EAR99

Package / Case :

TO-270AA

Terminal Position :

Dual

Case Connection :

SOURCE

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Power - Output :

14W

Configuration :

Single

Base Part Number :

MRFE6S9060

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Operating Temperature (Max) :

225°C

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat