MRF6V10010NR4

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Mfr.Part #
MRF6V10010NR4
Manufacturer
NXP Semiconductors
Package / Case
PLD-1.5
Datasheet
Download
Description
FET RF 100V 1.09GHZ PLD-1.5
Stock
1,526
In Stock :
1,526

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
DS Breakdown Voltage-Min :
100V
Base Part Number :
MRF6V10010
Published :
2010
Voltage - Test :
50V
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Transistor Application :
AMPLIFIER
JESD-30 Code :
R-PQCC-N4
Current - Test :
10mA
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
QUAD
Configuration :
Single
HTS Code :
8541.29.00.75
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Frequency :
1.09GHz
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Factory Lead Time :
10 Weeks
Gain :
25dB
Package / Case :
PLD-1.5
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
260
Transistor Type :
LDMOS
ECCN Code :
EAR99
Voltage - Rated :
100V
Number of Terminations :
4
JESD-609 Code :
e3
Terminal Form :
NO LEAD
Power - Output :
10W
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature (Max) :
200°C
Case Connection :
SOURCE
Surface Mount :
yes
Datasheets
MRF6V10010NR4
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF6V10010NR4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MRF6V10010, Gain:25dB, Package / Case:PLD-1.5, Number of Terminations:4, MRF6V10010NR4 pinout, MRF6V10010NR4 datasheet PDF, MRF6V10010NR4 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors MRF6V10010NR4 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors MRF6V10010NR4


MRF6V10010NR4 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

MRF6V10010NR4 Description


RF power transistors developed for applications with duty cycles ranging from 1% to 20% at frequencies between 960 and 1400 MHz. This gadget is appropriate for pulsed applications.



MRF6V10010NR4 Features


? characterized by large-signal series equivalent impedance parameters


? Up to a Maximum of 50 VDD Operation Qualified


? Protection from Integrated ESD


? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range


? RoHS conformant


? on reel-to-reel tape. 100 Units per 12 mm, 7 inch Reel, R4 Suffix.



MRF6V10010NR4 Applications


Switching applications


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