MRF6P24190HR6

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated :

68V

Frequency :

2.39GHz

Power - Output :

40W

Configuration :

COMMON SOURCE, 2 ELEMENTS

Terminal Form :

Flat

Published :

2008

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature (Max) :

225°C

Factory Lead Time :

8 Weeks

DS Breakdown Voltage-Min :

68V

Number of Terminations :

4

Transistor Type :

LDMOS

Number of Elements :

2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-CDFM-F4

Case Connection :

SOURCE

Gain :

14dB

Voltage - Test :

28V

Transistor Element Material :

SILICON

Current - Test :

1.9A

Terminal Position :

Dual

Polarity/Channel Type :

N-Channel

Package / Case :

NI-1230

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

AMPLIFIER

HTS Code :

8541.29.00.75

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Surface Mount :

yes