MRF6P24190HR6

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Voltage - Rated :

68V

HTS Code :

8541.29.00.75

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Current - Test :

1.9A

JESD-30 Code :

R-CDFM-F4

Transistor Application :

AMPLIFIER

Terminal Form :

Flat

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

68V

Frequency :

2.39GHz

Published :

2008

Operating Temperature (Max) :

225°C

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

LDMOS

Gain :

14dB

Transistor Element Material :

SILICON

Power - Output :

40W

Factory Lead Time :

8 Weeks

Configuration :

COMMON SOURCE, 2 ELEMENTS

ECCN Code :

EAR99

Package / Case :

NI-1230

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

Dual

Voltage - Test :

28V

Number of Elements :

2